STMicroelectronics STB11NM80 Type N-Channel MDmesh Power MOSFET, 11 A, 800 V Enhancement, 3-Pin TO-263

Κωδικός Προϊόντος της RS: 188-8280Κατασκευαστής: STMicroelectronicsΚωδικός Κατασκευαστή: STB11NM80T4
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Προβολή όλων σε MOSFETs

Τεχνικό φυλλάδιο

Προδιαγραφές

Product Type

MDmesh Power MOSFET

Channel Type

Type N

Maximum Continuous Drain Current Id

11A

Maximum Drain Source Voltage Vds

800V

Package Type

TO-263

Series

STB11NM80

Mount Type

Surface

Pin Count

3

Maximum Drain Source Resistance Rds

0.4Ω

Channel Mode

Enhancement

Maximum Power Dissipation Pd

150W

Maximum Gate Source Voltage Vgs

±30 V

Minimum Operating Temperature

-65°C

Typical Gate Charge Qg @ Vgs

43.6nC

Forward Voltage Vf

0.86V

Maximum Operating Temperature

150°C

Width

9.35 mm

Height

4.37mm

Length

10.4mm

Standards/Approvals

No

Automotive Standard

No

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Προβολή όλων σε MOSFETs

Ημερομηνία αποθέματος προσωρινά μη διαθέσιμη

€ 6.420,00

€ 6,42 Μονάδας (Σε ένα καρούλι των 1000) (Exc. Vat)Χωρίς Φ.Π.Α

€ 7.960,80

€ 7,961 Μονάδας (Σε ένα καρούλι των 1000) Με Φ.Π.Α

STMicroelectronics STB11NM80 Type N-Channel MDmesh Power MOSFET, 11 A, 800 V Enhancement, 3-Pin TO-263

€ 6.420,00

€ 6,42 Μονάδας (Σε ένα καρούλι των 1000) (Exc. Vat)Χωρίς Φ.Π.Α

€ 7.960,80

€ 7,961 Μονάδας (Σε ένα καρούλι των 1000) Με Φ.Π.Α

STMicroelectronics STB11NM80 Type N-Channel MDmesh Power MOSFET, 11 A, 800 V Enhancement, 3-Pin TO-263

Ημερομηνία αποθέματος προσωρινά μη διαθέσιμη

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more

Τεχνικό φυλλάδιο

Προδιαγραφές

Product Type

MDmesh Power MOSFET

Channel Type

Type N

Maximum Continuous Drain Current Id

11A

Maximum Drain Source Voltage Vds

800V

Package Type

TO-263

Series

STB11NM80

Mount Type

Surface

Pin Count

3

Maximum Drain Source Resistance Rds

0.4Ω

Channel Mode

Enhancement

Maximum Power Dissipation Pd

150W

Maximum Gate Source Voltage Vgs

±30 V

Minimum Operating Temperature

-65°C

Typical Gate Charge Qg @ Vgs

43.6nC

Forward Voltage Vf

0.86V

Maximum Operating Temperature

150°C

Width

9.35 mm

Height

4.37mm

Length

10.4mm

Standards/Approvals

No

Automotive Standard

No

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more