STMicroelectronics STripFET II N-Channel MOSFET, 120 A, 100 V, 3-Pin D2PAK STB120NF10T4

Κωδικός Προϊόντος της RS: 687-5065PΚατασκευαστής: STMicroelectronicsΚωδικός Κατασκευαστή: STB120NF10T4
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Προβολή όλων σε MOSFETs

Τεχνικό φυλλάδιο

Προδιαγραφές

Channel Type

N

Maximum Continuous Drain Current

120 A

Maximum Drain Source Voltage

100 V

Series

STripFET II

Package Type

D2PAK (TO-263)

Mounting Type

Surface Mount

Pin Count

3

Maximum Drain Source Resistance

10.5 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

4V

Minimum Gate Threshold Voltage

2V

Maximum Power Dissipation

312 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-20 V, +20 V

Typical Gate Charge @ Vgs

172 nC @ 10 V

Width

9.35mm

Transistor Material

Si

Number of Elements per Chip

1

Length

10.4mm

Maximum Operating Temperature

+175 °C

Height

4.6mm

Minimum Operating Temperature

-55 °C

Λεπτομέρειες Προϊόντος

N-Channel STripFET™ II, STMicroelectronics

STripFET™ MOSFETs with a wide breakdown voltage range offer ultra-low gate charge and low on-resistance.

MOSFET Transistors, STMicroelectronics

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Ημερομηνία αποθέματος προσωρινά μη διαθέσιμη

€ 55,10

€ 5,51 Μονάδας (διαθέσιμο σε ένα καρούλι) (Exc. Vat)Χωρίς Φ.Π.Α

€ 68,32

€ 6,832 Μονάδας (διαθέσιμο σε ένα καρούλι) Με Φ.Π.Α

STMicroelectronics STripFET II N-Channel MOSFET, 120 A, 100 V, 3-Pin D2PAK STB120NF10T4
Επιλέγξτε συσκευασία

€ 55,10

€ 5,51 Μονάδας (διαθέσιμο σε ένα καρούλι) (Exc. Vat)Χωρίς Φ.Π.Α

€ 68,32

€ 6,832 Μονάδας (διαθέσιμο σε ένα καρούλι) Με Φ.Π.Α

STMicroelectronics STripFET II N-Channel MOSFET, 120 A, 100 V, 3-Pin D2PAK STB120NF10T4

Ημερομηνία αποθέματος προσωρινά μη διαθέσιμη

Επιλέγξτε συσκευασία

Quantity ΠοσότηταΤιμή μονάδαςPer Καρούλι
10 - 24€ 5,51€ 11,02
26 - 98€ 5,30€ 10,60
100 - 498€ 4,31€ 8,62
500+€ 3,86€ 7,72

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more

Τεχνικό φυλλάδιο

Προδιαγραφές

Channel Type

N

Maximum Continuous Drain Current

120 A

Maximum Drain Source Voltage

100 V

Series

STripFET II

Package Type

D2PAK (TO-263)

Mounting Type

Surface Mount

Pin Count

3

Maximum Drain Source Resistance

10.5 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

4V

Minimum Gate Threshold Voltage

2V

Maximum Power Dissipation

312 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-20 V, +20 V

Typical Gate Charge @ Vgs

172 nC @ 10 V

Width

9.35mm

Transistor Material

Si

Number of Elements per Chip

1

Length

10.4mm

Maximum Operating Temperature

+175 °C

Height

4.6mm

Minimum Operating Temperature

-55 °C

Λεπτομέρειες Προϊόντος

N-Channel STripFET™ II, STMicroelectronics

STripFET™ MOSFETs with a wide breakdown voltage range offer ultra-low gate charge and low on-resistance.

MOSFET Transistors, STMicroelectronics

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more