STMicroelectronics STripFET II Type N-Channel MOSFET, 120 A, 100 V Enhancement, 3-Pin TO-263 STB120NF10T4
Τεχνικό φυλλάδιο
Προδιαγραφές
Brand
STMicroelectronicsProduct Type
MOSFET
Channel Type
Type N
Maximum Continuous Drain Current Id
120A
Maximum Drain Source Voltage Vds
100V
Package Type
TO-263
Series
STripFET II
Mount Type
Surface
Pin Count
3
Maximum Drain Source Resistance Rds
10.5mΩ
Channel Mode
Enhancement
Maximum Power Dissipation Pd
312W
Maximum Gate Source Voltage Vgs
20 V
Minimum Operating Temperature
-55°C
Typical Gate Charge Qg @ Vgs
172nC
Forward Voltage Vf
1.3V
Maximum Operating Temperature
175°C
Width
9.35 mm
Height
4.6mm
Length
10.4mm
Standards/Approvals
No
Automotive Standard
No
Λεπτομέρειες Προϊόντος
N-Channel STripFET™ II, STMicroelectronics
STripFET™ MOSFETs with a wide breakdown voltage range offer ultra-low gate charge and low on-resistance.
MOSFET Transistors, STMicroelectronics
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Ημερομηνία αποθέματος προσωρινά μη διαθέσιμη
€ 12,00
€ 6,00 Μονάδας (Σε ένα πακέτο των 2) (Exc. Vat)Χωρίς Φ.Π.Α
€ 14,88
€ 7,44 Μονάδας (Σε ένα πακέτο των 2) Με Φ.Π.Α
Standard
2
€ 12,00
€ 6,00 Μονάδας (Σε ένα πακέτο των 2) (Exc. Vat)Χωρίς Φ.Π.Α
€ 14,88
€ 7,44 Μονάδας (Σε ένα πακέτο των 2) Με Φ.Π.Α
Ημερομηνία αποθέματος προσωρινά μη διαθέσιμη
Standard
2
| Quantity Ποσότητα | Τιμή μονάδας | Per Πακέτο |
|---|---|---|
| 2 - 8 | € 6,00 | € 12,00 |
| 10 - 24 | € 5,51 | € 11,02 |
| 26 - 98 | € 5,30 | € 10,60 |
| 100 - 498 | € 4,31 | € 8,62 |
| 500+ | € 3,86 | € 7,72 |
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
- View and contribute website content and forums
- Download 3D Models, Schematics and Footprints from more than a million products
Τεχνικό φυλλάδιο
Προδιαγραφές
Brand
STMicroelectronicsProduct Type
MOSFET
Channel Type
Type N
Maximum Continuous Drain Current Id
120A
Maximum Drain Source Voltage Vds
100V
Package Type
TO-263
Series
STripFET II
Mount Type
Surface
Pin Count
3
Maximum Drain Source Resistance Rds
10.5mΩ
Channel Mode
Enhancement
Maximum Power Dissipation Pd
312W
Maximum Gate Source Voltage Vgs
20 V
Minimum Operating Temperature
-55°C
Typical Gate Charge Qg @ Vgs
172nC
Forward Voltage Vf
1.3V
Maximum Operating Temperature
175°C
Width
9.35 mm
Height
4.6mm
Length
10.4mm
Standards/Approvals
No
Automotive Standard
No
Λεπτομέρειες Προϊόντος
N-Channel STripFET™ II, STMicroelectronics
STripFET™ MOSFETs with a wide breakdown voltage range offer ultra-low gate charge and low on-resistance.
MOSFET Transistors, STMicroelectronics
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
- View and contribute website content and forums
- Download 3D Models, Schematics and Footprints from more than a million products