Τεχνικό φυλλάδιο
Προδιαγραφές
Brand
STMicroelectronicsProduct Type
MOSFET
Channel Type
N
Maximum Continuous Drain Current Id
12A
Maximum Drain Source Voltage Vds
500V
Package Type
TO-263
Series
STP12NM50
Mount Type
Surface
Pin Count
3
Maximum Drain Source Resistance Rds
350mΩ
Channel Mode
Enhancement
Maximum Power Dissipation Pd
160W
Minimum Operating Temperature
-65°C
Typical Gate Charge Qg @ Vgs
28nC
Maximum Gate Source Voltage Vgs
30V
Forward Voltage Vf
1.5V
Maximum Operating Temperature
150°C
Height
4.37mm
Length
10.4mm
Standards/Approvals
No
Width
9.35mm
Automotive Standard
No
Λεπτομέρειες Προϊόντος
The MDmesh™ is a new revolutionary MOSFET technology that associates the Multiple Drain process with the Companys PowerMESH™horizontal layout. The resulting product has an outstanding low on-resistance, impressively high dv/dt and excellent avalanche characteristics. The adoption of the Companys proprietary strip technique yields overall dynamic performance.
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Ημερομηνία αποθέματος προσωρινά μη διαθέσιμη
€ 2.980,00
€ 2,98 Μονάδας (Σε ένα καρούλι των 1000) (Exc. Vat)Χωρίς Φ.Π.Α
€ 3.695,20
€ 3,695 Μονάδας (Σε ένα καρούλι των 1000) Με Φ.Π.Α
1000
€ 2.980,00
€ 2,98 Μονάδας (Σε ένα καρούλι των 1000) (Exc. Vat)Χωρίς Φ.Π.Α
€ 3.695,20
€ 3,695 Μονάδας (Σε ένα καρούλι των 1000) Με Φ.Π.Α
Ημερομηνία αποθέματος προσωρινά μη διαθέσιμη
1000
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
Τεχνικό φυλλάδιο
Προδιαγραφές
Brand
STMicroelectronicsProduct Type
MOSFET
Channel Type
N
Maximum Continuous Drain Current Id
12A
Maximum Drain Source Voltage Vds
500V
Package Type
TO-263
Series
STP12NM50
Mount Type
Surface
Pin Count
3
Maximum Drain Source Resistance Rds
350mΩ
Channel Mode
Enhancement
Maximum Power Dissipation Pd
160W
Minimum Operating Temperature
-65°C
Typical Gate Charge Qg @ Vgs
28nC
Maximum Gate Source Voltage Vgs
30V
Forward Voltage Vf
1.5V
Maximum Operating Temperature
150°C
Height
4.37mm
Length
10.4mm
Standards/Approvals
No
Width
9.35mm
Automotive Standard
No
Λεπτομέρειες Προϊόντος
The MDmesh™ is a new revolutionary MOSFET technology that associates the Multiple Drain process with the Companys PowerMESH™horizontal layout. The resulting product has an outstanding low on-resistance, impressively high dv/dt and excellent avalanche characteristics. The adoption of the Companys proprietary strip technique yields overall dynamic performance.
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
