STMicroelectronics MDmesh DM2 Type N-Channel MOSFET, 12 A, 600 V Enhancement, 3-Pin TO-263

Κωδικός Προϊόντος της RS: 166-0942Κατασκευαστής: STMicroelectronicsΚωδικός Κατασκευαστή: STB18N60DM2
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Προβολή όλων σε MOSFETs

Τεχνικό φυλλάδιο

Προδιαγραφές

Product Type

MOSFET

Channel Type

Type N

Maximum Continuous Drain Current Id

12A

Maximum Drain Source Voltage Vds

600V

Package Type

TO-263

Series

MDmesh DM2

Mount Type

Surface

Pin Count

3

Maximum Drain Source Resistance Rds

290mΩ

Channel Mode

Enhancement

Forward Voltage Vf

1.3V

Maximum Power Dissipation Pd

90W

Maximum Gate Source Voltage Vgs

25 V

Minimum Operating Temperature

-55°C

Typical Gate Charge Qg @ Vgs

20nC

Maximum Operating Temperature

150°C

Length

9.35mm

Standards/Approvals

No

Width

10.4 mm

Height

4.6mm

Automotive Standard

No

Χώρα Προέλευσης

China

Λεπτομέρειες Προϊόντος

N-Channel MDmesh DM2 Series, STMicroelectronics

The MDmesh DM2 MOSFETs offer low RDS(on) and with the Improved diode reverse recovery time for efficiency, this series is optimised for full-bridge phase-shifted ZVS topologies.

MOSFET Transistors, STMicroelectronics

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Ημερομηνία αποθέματος προσωρινά μη διαθέσιμη

€ 2.560,00

€ 2,56 Μονάδας (Σε ένα καρούλι των 1000) (Exc. Vat)Χωρίς Φ.Π.Α

€ 3.174,40

€ 3,174 Μονάδας (Σε ένα καρούλι των 1000) Με Φ.Π.Α

STMicroelectronics MDmesh DM2 Type N-Channel MOSFET, 12 A, 600 V Enhancement, 3-Pin TO-263

€ 2.560,00

€ 2,56 Μονάδας (Σε ένα καρούλι των 1000) (Exc. Vat)Χωρίς Φ.Π.Α

€ 3.174,40

€ 3,174 Μονάδας (Σε ένα καρούλι των 1000) Με Φ.Π.Α

STMicroelectronics MDmesh DM2 Type N-Channel MOSFET, 12 A, 600 V Enhancement, 3-Pin TO-263

Ημερομηνία αποθέματος προσωρινά μη διαθέσιμη

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more

Τεχνικό φυλλάδιο

Προδιαγραφές

Product Type

MOSFET

Channel Type

Type N

Maximum Continuous Drain Current Id

12A

Maximum Drain Source Voltage Vds

600V

Package Type

TO-263

Series

MDmesh DM2

Mount Type

Surface

Pin Count

3

Maximum Drain Source Resistance Rds

290mΩ

Channel Mode

Enhancement

Forward Voltage Vf

1.3V

Maximum Power Dissipation Pd

90W

Maximum Gate Source Voltage Vgs

25 V

Minimum Operating Temperature

-55°C

Typical Gate Charge Qg @ Vgs

20nC

Maximum Operating Temperature

150°C

Length

9.35mm

Standards/Approvals

No

Width

10.4 mm

Height

4.6mm

Automotive Standard

No

Χώρα Προέλευσης

China

Λεπτομέρειες Προϊόντος

N-Channel MDmesh DM2 Series, STMicroelectronics

The MDmesh DM2 MOSFETs offer low RDS(on) and with the Improved diode reverse recovery time for efficiency, this series is optimised for full-bridge phase-shifted ZVS topologies.

MOSFET Transistors, STMicroelectronics

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more