N-Channel MOSFET Transistor, 15 A, 3-Pin D2PAK STMicroelectronics STB22N60M6

Κωδικός Προϊόντος της RS: 192-4650Κατασκευαστής: STMicroelectronicsΚωδικός Κατασκευαστή: STB22N60M6
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Τεχνικό φυλλάδιο

Προδιαγραφές

Brand

STMicroelectronics

Channel Type

N

Maximum Continuous Drain Current

15 A

Package Type

D2PAK

Mounting Type

Surface Mount

Pin Count

3

Maximum Drain Source Resistance

230 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

4.75V

Minimum Gate Threshold Voltage

3.25V

Maximum Power Dissipation

130 W

Transistor Configuration

Single

Maximum Gate Source Voltage

±25 V

Maximum Operating Temperature

+150 °C

Length

10.4mm

Typical Gate Charge @ Vgs

20 nC @ 10 V

Width

9.35mm

Number of Elements per Chip

1

Minimum Operating Temperature

-55 °C

Forward Diode Voltage

1.6V

Height

4.37mm

Χώρα Προέλευσης

China

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P.O.A.

N-Channel MOSFET Transistor, 15 A, 3-Pin D2PAK STMicroelectronics STB22N60M6

1000

Διατίθεται σε πολλαπλάσια από 1000
1000P.O.A.
2000P.O.A.
3000P.O.A.
4000P.O.A.
5000P.O.A.
6000P.O.A.
7000P.O.A.
8000P.O.A.
9000P.O.A.
10000P.O.A.
11000P.O.A.
12000P.O.A.
13000P.O.A.
14000P.O.A.
15000P.O.A.

P.O.A.

N-Channel MOSFET Transistor, 15 A, 3-Pin D2PAK STMicroelectronics STB22N60M6
Ημερομηνία αποθέματος προσωρινά μη διαθέσιμη

1000

Διατίθεται σε πολλαπλάσια από 1000
1000P.O.A.
2000P.O.A.
3000P.O.A.
4000P.O.A.
5000P.O.A.
6000P.O.A.
7000P.O.A.
8000P.O.A.
9000P.O.A.
10000P.O.A.
11000P.O.A.
12000P.O.A.
13000P.O.A.
14000P.O.A.
15000P.O.A.

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more

Τεχνικό φυλλάδιο

Προδιαγραφές

Brand

STMicroelectronics

Channel Type

N

Maximum Continuous Drain Current

15 A

Package Type

D2PAK

Mounting Type

Surface Mount

Pin Count

3

Maximum Drain Source Resistance

230 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

4.75V

Minimum Gate Threshold Voltage

3.25V

Maximum Power Dissipation

130 W

Transistor Configuration

Single

Maximum Gate Source Voltage

±25 V

Maximum Operating Temperature

+150 °C

Length

10.4mm

Typical Gate Charge @ Vgs

20 nC @ 10 V

Width

9.35mm

Number of Elements per Chip

1

Minimum Operating Temperature

-55 °C

Forward Diode Voltage

1.6V

Height

4.37mm

Χώρα Προέλευσης

China

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more