STMicroelectronics MDmesh N-Channel MOSFET, 17 A, 500 V, 3-Pin D2PAK STB23NM50N

Κωδικός Προϊόντος της RS: 761-0663PΚατασκευαστής: STMicroelectronicsΚωδικός Κατασκευαστή: STB23NM50N
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Προβολή όλων σε MOSFETs

Τεχνικό φυλλάδιο

Προδιαγραφές

Channel Type

N

Maximum Continuous Drain Current

17 A

Maximum Drain Source Voltage

500 V

Package Type

D2PAK (TO-263)

Series

MDmesh

Mounting Type

Surface Mount

Pin Count

3

Maximum Drain Source Resistance

190 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

4V

Minimum Gate Threshold Voltage

2V

Maximum Power Dissipation

125 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-25 V, +25 V

Length

10.75mm

Maximum Operating Temperature

+150 °C

Typical Gate Charge @ Vgs

45 nC @ 10 V

Width

10.4mm

Transistor Material

Si

Number of Elements per Chip

1

Height

4.6mm

Λεπτομέρειες Προϊόντος

N-Channel MDmesh™, 500V, STMicroelectronics

MOSFET Transistors, STMicroelectronics

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€ 13,68

€ 6,84 Μονάδας (διαθέσιμο σε ένα καρούλι) (Exc. Vat)Χωρίς Φ.Π.Α

€ 16,96

€ 8,48 Μονάδας (διαθέσιμο σε ένα καρούλι) Με Φ.Π.Α

STMicroelectronics MDmesh N-Channel MOSFET, 17 A, 500 V, 3-Pin D2PAK STB23NM50N
Επιλέγξτε συσκευασία

€ 13,68

€ 6,84 Μονάδας (διαθέσιμο σε ένα καρούλι) (Exc. Vat)Χωρίς Φ.Π.Α

€ 16,96

€ 8,48 Μονάδας (διαθέσιμο σε ένα καρούλι) Με Φ.Π.Α

STMicroelectronics MDmesh N-Channel MOSFET, 17 A, 500 V, 3-Pin D2PAK STB23NM50N

Ημερομηνία αποθέματος προσωρινά μη διαθέσιμη

Επιλέγξτε συσκευασία

Ημερομηνία αποθέματος προσωρινά μη διαθέσιμη

Ideate. Create. Collaborate

JOIN FOR FREE

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  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
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  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more

Τεχνικό φυλλάδιο

Προδιαγραφές

Channel Type

N

Maximum Continuous Drain Current

17 A

Maximum Drain Source Voltage

500 V

Package Type

D2PAK (TO-263)

Series

MDmesh

Mounting Type

Surface Mount

Pin Count

3

Maximum Drain Source Resistance

190 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

4V

Minimum Gate Threshold Voltage

2V

Maximum Power Dissipation

125 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-25 V, +25 V

Length

10.75mm

Maximum Operating Temperature

+150 °C

Typical Gate Charge @ Vgs

45 nC @ 10 V

Width

10.4mm

Transistor Material

Si

Number of Elements per Chip

1

Height

4.6mm

Λεπτομέρειες Προϊόντος

N-Channel MDmesh™, 500V, STMicroelectronics

MOSFET Transistors, STMicroelectronics

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more