STMicroelectronics STripFET N-Channel MOSFET, 40 A, 200 V, 3-Pin D2PAK STB40NF20

Κωδικός Προϊόντος της RS: 168-8030Κατασκευαστής: STMicroelectronicsΚωδικός Κατασκευαστή: STB40NF20
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Προβολή όλων σε MOSFETs

Τεχνικό φυλλάδιο

Προδιαγραφές

Channel Type

N

Maximum Continuous Drain Current

40 A

Maximum Drain Source Voltage

200 V

Series

STripFET

Package Type

D2PAK (TO-263)

Mounting Type

Surface Mount

Pin Count

3

Maximum Drain Source Resistance

45 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

4V

Minimum Gate Threshold Voltage

2V

Maximum Power Dissipation

160 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-20 V, +20 V

Length

10.4mm

Number of Elements per Chip

1

Width

9.35mm

Typical Gate Charge @ Vgs

75 nC @ 10 V

Transistor Material

Si

Maximum Operating Temperature

+150 °C

Minimum Operating Temperature

-55 °C

Height

4.6mm

Χώρα Προέλευσης

China

Λεπτομέρειες Προϊόντος

N-Channel STripFET™, STMicroelectronics

MOSFET Transistors, STMicroelectronics

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€ 5.820,00

€ 5,82 Μονάδας (Σε ένα καρούλι των 1000) (Exc. Vat)Χωρίς Φ.Π.Α

€ 7.216,80

€ 7,217 Μονάδας (Σε ένα καρούλι των 1000) Με Φ.Π.Α

STMicroelectronics STripFET N-Channel MOSFET, 40 A, 200 V, 3-Pin D2PAK STB40NF20

€ 5.820,00

€ 5,82 Μονάδας (Σε ένα καρούλι των 1000) (Exc. Vat)Χωρίς Φ.Π.Α

€ 7.216,80

€ 7,217 Μονάδας (Σε ένα καρούλι των 1000) Με Φ.Π.Α

STMicroelectronics STripFET N-Channel MOSFET, 40 A, 200 V, 3-Pin D2PAK STB40NF20

Ημερομηνία αποθέματος προσωρινά μη διαθέσιμη

Ημερομηνία αποθέματος προσωρινά μη διαθέσιμη

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No hidden fees!

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  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
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Click here to find out more

Τεχνικό φυλλάδιο

Προδιαγραφές

Channel Type

N

Maximum Continuous Drain Current

40 A

Maximum Drain Source Voltage

200 V

Series

STripFET

Package Type

D2PAK (TO-263)

Mounting Type

Surface Mount

Pin Count

3

Maximum Drain Source Resistance

45 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

4V

Minimum Gate Threshold Voltage

2V

Maximum Power Dissipation

160 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-20 V, +20 V

Length

10.4mm

Number of Elements per Chip

1

Width

9.35mm

Typical Gate Charge @ Vgs

75 nC @ 10 V

Transistor Material

Si

Maximum Operating Temperature

+150 °C

Minimum Operating Temperature

-55 °C

Height

4.6mm

Χώρα Προέλευσης

China

Λεπτομέρειες Προϊόντος

N-Channel STripFET™, STMicroelectronics

MOSFET Transistors, STMicroelectronics

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more