STMicroelectronics Type N-Channel MOSFET, 5.8 A, 900 V Enhancement, 3-Pin TO-263

Κωδικός Προϊόντος της RS: 920-6639Κατασκευαστής: STMicroelectronicsΚωδικός Κατασκευαστή: STB6NK90ZT4
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Προβολή όλων σε MOSFETs

Τεχνικό φυλλάδιο

Προδιαγραφές

Channel Type

Type N

Product Type

MOSFET

Maximum Continuous Drain Current Id

5.8A

Maximum Drain Source Voltage Vds

900V

Package Type

TO-263

Mount Type

Surface

Pin Count

3

Maximum Drain Source Resistance Rds

Channel Mode

Enhancement

Minimum Operating Temperature

-55°C

Forward Voltage Vf

1.6V

Typical Gate Charge Qg @ Vgs

46.5nC

Maximum Power Dissipation Pd

140W

Maximum Gate Source Voltage Vgs

30 V

Maximum Operating Temperature

150°C

Standards/Approvals

No

Width

9.35 mm

Length

10.4mm

Height

4.6mm

Automotive Standard

No

Λεπτομέρειες Προϊόντος

N-Channel MDmesh™ SuperMESH™, 700V to 1200V, STMicroelectronics

MOSFET Transistors, STMicroelectronics

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Ημερομηνία αποθέματος προσωρινά μη διαθέσιμη

€ 1.850,00

€ 1,85 Μονάδας (Σε ένα καρούλι των 1000) (Exc. Vat)Χωρίς Φ.Π.Α

€ 2.294,00

€ 2,294 Μονάδας (Σε ένα καρούλι των 1000) Με Φ.Π.Α

STMicroelectronics Type N-Channel MOSFET, 5.8 A, 900 V Enhancement, 3-Pin TO-263

€ 1.850,00

€ 1,85 Μονάδας (Σε ένα καρούλι των 1000) (Exc. Vat)Χωρίς Φ.Π.Α

€ 2.294,00

€ 2,294 Μονάδας (Σε ένα καρούλι των 1000) Με Φ.Π.Α

STMicroelectronics Type N-Channel MOSFET, 5.8 A, 900 V Enhancement, 3-Pin TO-263

Ημερομηνία αποθέματος προσωρινά μη διαθέσιμη

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more

Τεχνικό φυλλάδιο

Προδιαγραφές

Channel Type

Type N

Product Type

MOSFET

Maximum Continuous Drain Current Id

5.8A

Maximum Drain Source Voltage Vds

900V

Package Type

TO-263

Mount Type

Surface

Pin Count

3

Maximum Drain Source Resistance Rds

Channel Mode

Enhancement

Minimum Operating Temperature

-55°C

Forward Voltage Vf

1.6V

Typical Gate Charge Qg @ Vgs

46.5nC

Maximum Power Dissipation Pd

140W

Maximum Gate Source Voltage Vgs

30 V

Maximum Operating Temperature

150°C

Standards/Approvals

No

Width

9.35 mm

Length

10.4mm

Height

4.6mm

Automotive Standard

No

Λεπτομέρειες Προϊόντος

N-Channel MDmesh™ SuperMESH™, 700V to 1200V, STMicroelectronics

MOSFET Transistors, STMicroelectronics

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more