STMicroelectronics STripFET F3 N-Channel MOSFET, 70 A, 30 V, 3-Pin D2PAK STB70NF3LLT4

Τεχνικό φυλλάδιο
Προδιαγραφές
Brand
STMicroelectronicsChannel Type
N
Maximum Continuous Drain Current
70 A
Maximum Drain Source Voltage
30 V
Package Type
D2PAK (TO-263)
Series
STripFET F3
Mounting Type
Surface Mount
Pin Count
3
Maximum Drain Source Resistance
12 mΩ
Channel Mode
Enhancement
Minimum Gate Threshold Voltage
1V
Maximum Power Dissipation
100 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-16 V, +16 V
Typical Gate Charge @ Vgs
24 nC @ 4.5 V
Length
10.75mm
Transistor Material
Si
Maximum Operating Temperature
+175 °C
Number of Elements per Chip
1
Width
10.4mm
Minimum Operating Temperature
-55 °C
Height
4.6mm
Λεπτομέρειες Προϊόντος
N-Channel STripFET™ F3, STMicroelectronics
STripFET™ MOSFETs with a wide breakdown voltage range offer ultra-low gate charge and low on-resistance.
MOSFET Transistors, STMicroelectronics
P.O.A.
Μονάδας (Σε ένα καρούλι των 1000) (Exc. Vat)Χωρίς Φ.Π.Α
1000
P.O.A.
Μονάδας (Σε ένα καρούλι των 1000) (Exc. Vat)Χωρίς Φ.Π.Α
Ημερομηνία αποθέματος προσωρινά μη διαθέσιμη
1000
Ημερομηνία αποθέματος προσωρινά μη διαθέσιμη
Τεχνικό φυλλάδιο
Προδιαγραφές
Brand
STMicroelectronicsChannel Type
N
Maximum Continuous Drain Current
70 A
Maximum Drain Source Voltage
30 V
Package Type
D2PAK (TO-263)
Series
STripFET F3
Mounting Type
Surface Mount
Pin Count
3
Maximum Drain Source Resistance
12 mΩ
Channel Mode
Enhancement
Minimum Gate Threshold Voltage
1V
Maximum Power Dissipation
100 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-16 V, +16 V
Typical Gate Charge @ Vgs
24 nC @ 4.5 V
Length
10.75mm
Transistor Material
Si
Maximum Operating Temperature
+175 °C
Number of Elements per Chip
1
Width
10.4mm
Minimum Operating Temperature
-55 °C
Height
4.6mm
Λεπτομέρειες Προϊόντος
N-Channel STripFET™ F3, STMicroelectronics
STripFET™ MOSFETs with a wide breakdown voltage range offer ultra-low gate charge and low on-resistance.