STMicroelectronics STripFET F3 N-Channel MOSFET, 80 A, 55 V, 3-Pin DPAK STD65N55F3

Κωδικός Προϊόντος της RS: 795-9000Κατασκευαστής: STMicroelectronicsΚωδικός Κατασκευαστή: STD65N55F3
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Τεχνικό φυλλάδιο

Προδιαγραφές

Channel Type

N

Maximum Continuous Drain Current

80 A

Maximum Drain Source Voltage

55 V

Series

STripFET F3

Package Type

DPAK (TO-252)

Mounting Type

Surface Mount

Pin Count

3

Maximum Drain Source Resistance

8.5 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

4V

Minimum Gate Threshold Voltage

2V

Maximum Power Dissipation

110 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-20 V, +20 V

Transistor Material

Si

Number of Elements per Chip

1

Length

6.6mm

Typical Gate Charge @ Vgs

33.5 nC @ 10 V

Maximum Operating Temperature

+175 °C

Width

6.2mm

Minimum Operating Temperature

-55 °C

Height

2.4mm

Λεπτομέρειες Προϊόντος

N-Channel STripFET™ F3, STMicroelectronics

STripFET™ MOSFETs with a wide breakdown voltage range offer ultra-low gate charge and low on-resistance.

MOSFET Transistors, STMicroelectronics

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€ 14,25

€ 2,85 Μονάδας (Σε ένα πακέτο των 5) (Exc. Vat)Χωρίς Φ.Π.Α

€ 17,67

€ 3,534 Μονάδας (Σε ένα πακέτο των 5) Με Φ.Π.Α

STMicroelectronics STripFET F3 N-Channel MOSFET, 80 A, 55 V, 3-Pin DPAK STD65N55F3
Επιλέγξτε συσκευασία

€ 14,25

€ 2,85 Μονάδας (Σε ένα πακέτο των 5) (Exc. Vat)Χωρίς Φ.Π.Α

€ 17,67

€ 3,534 Μονάδας (Σε ένα πακέτο των 5) Με Φ.Π.Α

STMicroelectronics STripFET F3 N-Channel MOSFET, 80 A, 55 V, 3-Pin DPAK STD65N55F3

Ημερομηνία αποθέματος προσωρινά μη διαθέσιμη

Επιλέγξτε συσκευασία

Ημερομηνία αποθέματος προσωρινά μη διαθέσιμη

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JOIN FOR FREE

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  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more

Τεχνικό φυλλάδιο

Προδιαγραφές

Channel Type

N

Maximum Continuous Drain Current

80 A

Maximum Drain Source Voltage

55 V

Series

STripFET F3

Package Type

DPAK (TO-252)

Mounting Type

Surface Mount

Pin Count

3

Maximum Drain Source Resistance

8.5 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

4V

Minimum Gate Threshold Voltage

2V

Maximum Power Dissipation

110 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-20 V, +20 V

Transistor Material

Si

Number of Elements per Chip

1

Length

6.6mm

Typical Gate Charge @ Vgs

33.5 nC @ 10 V

Maximum Operating Temperature

+175 °C

Width

6.2mm

Minimum Operating Temperature

-55 °C

Height

2.4mm

Λεπτομέρειες Προϊόντος

N-Channel STripFET™ F3, STMicroelectronics

STripFET™ MOSFETs with a wide breakdown voltage range offer ultra-low gate charge and low on-resistance.

MOSFET Transistors, STMicroelectronics

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more