STMicroelectronics STDRIVEG212QTR, Gate Driver 2, 1.8 A 18-Pin 20V, QFN

The STMicroelectronics high‑speed half‑bridge gate driver is optimised for driving enhanced‑mode GaN HEMTs with a 5 V gate voltage. It features a robust high‑side driver section capable of supporting voltage rails up to 220 V, supplied through an integrated bootstrap. With ultra‑fast startup, low propagation delay, and Advanced protection mechanisms, it is designed for reliable and efficient operation in high‑frequency power conversion applications.

• Separate sink and source paths with 1.8 A sink and 0.8 A source capability
• High side and low side linear regulators providing 5 V gate driving voltage
• Propagation delay of 50 ns with minimum output Pulse of 15 ns
• Comparator for overcurrent detection with Smart Shutdown and fault reporting functions