STMicroelectronics Type N-Channel MOSFET, 40 A, 600 V Enhancement, 4-Pin ISOTOP

Κωδικός Προϊόντος της RS: 103-1568Κατασκευαστής: STMicroelectronicsΚωδικός Κατασκευαστή: STE40NC60
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Προβολή όλων σε MOSFETs

Τεχνικό φυλλάδιο

Προδιαγραφές

Product Type

MOSFET

Channel Type

Type N

Maximum Continuous Drain Current Id

40A

Maximum Drain Source Voltage Vds

600V

Package Type

ISOTOP

Mount Type

Panel

Pin Count

4

Maximum Drain Source Resistance Rds

130mΩ

Channel Mode

Enhancement

Typical Gate Charge Qg @ Vgs

307.5nC

Maximum Power Dissipation Pd

460W

Maximum Gate Source Voltage Vgs

±30 V

Minimum Operating Temperature

-65°C

Forward Voltage Vf

1.3V

Maximum Operating Temperature

150°C

Width

25.5 mm

Length

38.2mm

Height

9.1mm

Standards/Approvals

No

Automotive Standard

No

Λεπτομέρειες Προϊόντος

N-Channel MDmesh™ SuperMESH™, 250V to 650V, STMicroelectronics

MOSFET Transistors, STMicroelectronics

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Ημερομηνία αποθέματος προσωρινά μη διαθέσιμη

€ 454,50

€ 45,45 Μονάδας (Σε μία ράγα των 10) (Exc. Vat)Χωρίς Φ.Π.Α

€ 563,58

€ 56,358 Μονάδας (Σε μία ράγα των 10) Με Φ.Π.Α

STMicroelectronics Type N-Channel MOSFET, 40 A, 600 V Enhancement, 4-Pin ISOTOP

€ 454,50

€ 45,45 Μονάδας (Σε μία ράγα των 10) (Exc. Vat)Χωρίς Φ.Π.Α

€ 563,58

€ 56,358 Μονάδας (Σε μία ράγα των 10) Με Φ.Π.Α

STMicroelectronics Type N-Channel MOSFET, 40 A, 600 V Enhancement, 4-Pin ISOTOP

Ημερομηνία αποθέματος προσωρινά μη διαθέσιμη

Quantity ΠοσότηταΤιμή μονάδαςPer Ράγα
10 - 40€ 45,45€ 454,50
50 - 90€ 44,06€ 440,60
100 - 190€ 39,44€ 394,40
200 - 490€ 37,35€ 373,50
500+€ 35,21€ 352,10

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more

Τεχνικό φυλλάδιο

Προδιαγραφές

Product Type

MOSFET

Channel Type

Type N

Maximum Continuous Drain Current Id

40A

Maximum Drain Source Voltage Vds

600V

Package Type

ISOTOP

Mount Type

Panel

Pin Count

4

Maximum Drain Source Resistance Rds

130mΩ

Channel Mode

Enhancement

Typical Gate Charge Qg @ Vgs

307.5nC

Maximum Power Dissipation Pd

460W

Maximum Gate Source Voltage Vgs

±30 V

Minimum Operating Temperature

-65°C

Forward Voltage Vf

1.3V

Maximum Operating Temperature

150°C

Width

25.5 mm

Length

38.2mm

Height

9.1mm

Standards/Approvals

No

Automotive Standard

No

Λεπτομέρειες Προϊόντος

N-Channel MDmesh™ SuperMESH™, 250V to 650V, STMicroelectronics

MOSFET Transistors, STMicroelectronics

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more