STMicroelectronics Type N-Channel MOSFET, 53 A, 500 V Enhancement, 4-Pin ISOTOP STE53NC50

Κωδικός Προϊόντος της RS: 168-6097Κατασκευαστής: STMicroelectronicsΚωδικός Κατασκευαστή: STE53NC50
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Προβολή όλων σε MOSFETs

Τεχνικό φυλλάδιο

Προδιαγραφές

Channel Type

Type N

Product Type

MOSFET

Maximum Continuous Drain Current Id

53A

Maximum Drain Source Voltage Vds

500V

Package Type

ISOTOP

Mount Type

Panel

Pin Count

4

Maximum Drain Source Resistance Rds

80mΩ

Channel Mode

Enhancement

Minimum Operating Temperature

-65°C

Forward Voltage Vf

1.6V

Typical Gate Charge Qg @ Vgs

310nC

Maximum Power Dissipation Pd

460W

Maximum Gate Source Voltage Vgs

30 V

Maximum Operating Temperature

150°C

Standards/Approvals

No

Width

25.5 mm

Length

38.2mm

Height

9.1mm

Automotive Standard

No

Λεπτομέρειες Προϊόντος

N-Channel MDmesh™ SuperMESH™, 250V to 650V, STMicroelectronics

MOSFET Transistors, STMicroelectronics

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Ημερομηνία αποθέματος προσωρινά μη διαθέσιμη

€ 450,30

€ 45,03 Μονάδας (Σε μία ράγα των 10) (Exc. Vat)Χωρίς Φ.Π.Α

€ 558,37

€ 55,837 Μονάδας (Σε μία ράγα των 10) Με Φ.Π.Α

STMicroelectronics Type N-Channel MOSFET, 53 A, 500 V Enhancement, 4-Pin ISOTOP STE53NC50

€ 450,30

€ 45,03 Μονάδας (Σε μία ράγα των 10) (Exc. Vat)Χωρίς Φ.Π.Α

€ 558,37

€ 55,837 Μονάδας (Σε μία ράγα των 10) Με Φ.Π.Α

STMicroelectronics Type N-Channel MOSFET, 53 A, 500 V Enhancement, 4-Pin ISOTOP STE53NC50

Ημερομηνία αποθέματος προσωρινά μη διαθέσιμη

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more

Τεχνικό φυλλάδιο

Προδιαγραφές

Channel Type

Type N

Product Type

MOSFET

Maximum Continuous Drain Current Id

53A

Maximum Drain Source Voltage Vds

500V

Package Type

ISOTOP

Mount Type

Panel

Pin Count

4

Maximum Drain Source Resistance Rds

80mΩ

Channel Mode

Enhancement

Minimum Operating Temperature

-65°C

Forward Voltage Vf

1.6V

Typical Gate Charge Qg @ Vgs

310nC

Maximum Power Dissipation Pd

460W

Maximum Gate Source Voltage Vgs

30 V

Maximum Operating Temperature

150°C

Standards/Approvals

No

Width

25.5 mm

Length

38.2mm

Height

9.1mm

Automotive Standard

No

Λεπτομέρειες Προϊόντος

N-Channel MDmesh™ SuperMESH™, 250V to 650V, STMicroelectronics

MOSFET Transistors, STMicroelectronics

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more