Τεχνικό φυλλάδιο
Προδιαγραφές
Brand
STMicroelectronicsProduct Type
MOSFET
Channel Type
Type N
Maximum Continuous Drain Current Id
11A
Maximum Drain Source Voltage Vds
600V
Package Type
TO-220FP
Series
MDmesh
Mount Type
Through Hole
Pin Count
3
Maximum Drain Source Resistance Rds
360mΩ
Channel Mode
Enhancement
Maximum Gate Source Voltage Vgs
25, -25V
Maximum Operating Temperature
150°C
Transistor Configuration
Single
Length
10.4mm
Height
16.4mm
Width
4.6mm
Number of Elements per Chip
1
Λεπτομέρειες Προϊόντος
These devices are N-channel Power MOSFETs developed using the second generation of MDmesh technology. These revolutionary Power MOSFETs associate a vertical structure to the companys strip layout to yield one of the worlds lowest on-resistance and gate charge. They are therefore suitable for the most demanding high-efficiency converters.
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Ημερομηνία αποθέματος προσωρινά μη διαθέσιμη
P.O.A.
Μονάδας (Σε μία ράγα των 50) (Exc. Vat)Χωρίς Φ.Π.Α
50
P.O.A.
Μονάδας (Σε μία ράγα των 50) (Exc. Vat)Χωρίς Φ.Π.Α
Ημερομηνία αποθέματος προσωρινά μη διαθέσιμη
50
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
Τεχνικό φυλλάδιο
Προδιαγραφές
Brand
STMicroelectronicsProduct Type
MOSFET
Channel Type
Type N
Maximum Continuous Drain Current Id
11A
Maximum Drain Source Voltage Vds
600V
Package Type
TO-220FP
Series
MDmesh
Mount Type
Through Hole
Pin Count
3
Maximum Drain Source Resistance Rds
360mΩ
Channel Mode
Enhancement
Maximum Gate Source Voltage Vgs
25, -25V
Maximum Operating Temperature
150°C
Transistor Configuration
Single
Length
10.4mm
Height
16.4mm
Width
4.6mm
Number of Elements per Chip
1
Λεπτομέρειες Προϊόντος
These devices are N-channel Power MOSFETs developed using the second generation of MDmesh technology. These revolutionary Power MOSFETs associate a vertical structure to the companys strip layout to yield one of the worlds lowest on-resistance and gate charge. They are therefore suitable for the most demanding high-efficiency converters.
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
