Τεχνικό φυλλάδιο
Προδιαγραφές
Brand
STMicroelectronicsMaximum Continuous Collector Current Ic
10A
Product Type
IGBT
Maximum Collector Emitter Voltage Vceo
375V
Maximum Power Dissipation Pd
125W
Package Type
TO-263
Mount Type
Surface
Channel Type
N
Pin Count
3
Switching Speed
8μs
Maximum Gate Emitter Voltage VGEO
12 V
Maximum Collector Emitter Saturation Voltage VceSAT
1.8V
Minimum Operating Temperature
-65°C
Maximum Operating Temperature
175°C
Length
28.9mm
Height
4.6mm
Standards/Approvals
RoHS
Width
10.4mm
Automotive Standard
No
Λεπτομέρειες Προϊόντος
The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.
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€ 7,20
€ 3,60 Μονάδας (διαθέσιμο σε ένα καρούλι) (Exc. Vat)Χωρίς Φ.Π.Α
€ 8,93
€ 4,464 Μονάδας (διαθέσιμο σε ένα καρούλι) Με Φ.Π.Α
Ημερομηνία αποθέματος προσωρινά μη διαθέσιμη
Συσκευασία Παραγωγής (Καρούλι)
2
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Τεχνικό φυλλάδιο
Προδιαγραφές
Brand
STMicroelectronicsMaximum Continuous Collector Current Ic
10A
Product Type
IGBT
Maximum Collector Emitter Voltage Vceo
375V
Maximum Power Dissipation Pd
125W
Package Type
TO-263
Mount Type
Surface
Channel Type
N
Pin Count
3
Switching Speed
8μs
Maximum Gate Emitter Voltage VGEO
12 V
Maximum Collector Emitter Saturation Voltage VceSAT
1.8V
Minimum Operating Temperature
-65°C
Maximum Operating Temperature
175°C
Length
28.9mm
Height
4.6mm
Standards/Approvals
RoHS
Width
10.4mm
Automotive Standard
No
Λεπτομέρειες Προϊόντος
The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
