STMicroelectronics, Type N-Channel IGBT, 30 A 420 V, 3-Pin TO-263, Surface
Τεχνικό φυλλάδιο
Προδιαγραφές
Brand
STMicroelectronicsMaximum Continuous Collector Current Ic
30A
Product Type
IGBT
Maximum Collector Emitter Voltage Vceo
420V
Maximum Power Dissipation Pd
150W
Package Type
TO-263
Mount Type
Surface
Channel Type
Type N
Pin Count
3
Switching Speed
1MHz
Maximum Gate Emitter Voltage VGEO
16 V
Minimum Operating Temperature
-55°C
Maximum Collector Emitter Saturation Voltage VceSAT
1.7V
Maximum Operating Temperature
175°C
Width
9.35 mm
Height
4.6mm
Length
10.4mm
Standards/Approvals
No
Series
Automotive Grade
Automotive Standard
AEC-Q101
Λεπτομέρειες Προϊόντος
IGBT Discretes, STMicroelectronics
IGBT Discretes & Modules, STMicroelectronics
The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.
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Ημερομηνία αποθέματος προσωρινά μη διαθέσιμη
€ 13,20
€ 2,64 Μονάδας (διαθέσιμο σε ένα καρούλι) (Exc. Vat)Χωρίς Φ.Π.Α
€ 16,37
€ 3,274 Μονάδας (διαθέσιμο σε ένα καρούλι) Με Φ.Π.Α
Συσκευασία Παραγωγής (Καρούλι)
5
€ 13,20
€ 2,64 Μονάδας (διαθέσιμο σε ένα καρούλι) (Exc. Vat)Χωρίς Φ.Π.Α
€ 16,37
€ 3,274 Μονάδας (διαθέσιμο σε ένα καρούλι) Με Φ.Π.Α
Ημερομηνία αποθέματος προσωρινά μη διαθέσιμη
Συσκευασία Παραγωγής (Καρούλι)
5
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
- View and contribute website content and forums
- Download 3D Models, Schematics and Footprints from more than a million products
Τεχνικό φυλλάδιο
Προδιαγραφές
Brand
STMicroelectronicsMaximum Continuous Collector Current Ic
30A
Product Type
IGBT
Maximum Collector Emitter Voltage Vceo
420V
Maximum Power Dissipation Pd
150W
Package Type
TO-263
Mount Type
Surface
Channel Type
Type N
Pin Count
3
Switching Speed
1MHz
Maximum Gate Emitter Voltage VGEO
16 V
Minimum Operating Temperature
-55°C
Maximum Collector Emitter Saturation Voltage VceSAT
1.7V
Maximum Operating Temperature
175°C
Width
9.35 mm
Height
4.6mm
Length
10.4mm
Standards/Approvals
No
Series
Automotive Grade
Automotive Standard
AEC-Q101
Λεπτομέρειες Προϊόντος
IGBT Discretes, STMicroelectronics
IGBT Discretes & Modules, STMicroelectronics
The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
- View and contribute website content and forums
- Download 3D Models, Schematics and Footprints from more than a million products