
Τεχνικό φυλλάδιο
Προδιαγραφές
Brand
STMicroelectronicsMaximum Continuous Collector Current Ic
25A
Product Type
IGBT
Maximum Collector Emitter Voltage Vceo
450V
Maximum Power Dissipation Pd
150W
Package Type
TO-263
Mount Type
Surface
Channel Type
Type N
Pin Count
3
Switching Speed
8.4μs
Maximum Gate Emitter Voltage VGEO
16 V
Minimum Operating Temperature
-55°C
Maximum Collector Emitter Saturation Voltage VceSAT
1.55V
Maximum Operating Temperature
175°C
Height
4.6mm
Length
10.4mm
Standards/Approvals
AEC-Q101
Width
9.35mm
Series
Automotive Grade
Energy Rating
300mJ
Automotive Standard
AEC-Q101
Λεπτομέρειες Προϊόντος
This application-specific IGBT utilizes the most Advanced PowerMESH™ technology optimized for Coil driving in the harsh environment of automotive ignition systems. These devices show very low on-state voltage and very high SCIS energy capability over a wide operating temperature range. Moreover, ESD-protected logic level gate input and an integrated gate resistor means no external protection circuitry is required
Ημερομηνία αποθέματος προσωρινά μη διαθέσιμη
€ 2.660,00
€ 2,66 Μονάδας (Σε ένα καρούλι των 1000) (Exc. Vat)Χωρίς Φ.Π.Α
€ 3.298,40
€ 3,298 Μονάδας (Σε ένα καρούλι των 1000) Με Φ.Π.Α
1000
€ 2.660,00
€ 2,66 Μονάδας (Σε ένα καρούλι των 1000) (Exc. Vat)Χωρίς Φ.Π.Α
€ 3.298,40
€ 3,298 Μονάδας (Σε ένα καρούλι των 1000) Με Φ.Π.Α
Ημερομηνία αποθέματος προσωρινά μη διαθέσιμη
1000
Τεχνικό φυλλάδιο
Προδιαγραφές
Brand
STMicroelectronicsMaximum Continuous Collector Current Ic
25A
Product Type
IGBT
Maximum Collector Emitter Voltage Vceo
450V
Maximum Power Dissipation Pd
150W
Package Type
TO-263
Mount Type
Surface
Channel Type
Type N
Pin Count
3
Switching Speed
8.4μs
Maximum Gate Emitter Voltage VGEO
16 V
Minimum Operating Temperature
-55°C
Maximum Collector Emitter Saturation Voltage VceSAT
1.55V
Maximum Operating Temperature
175°C
Height
4.6mm
Length
10.4mm
Standards/Approvals
AEC-Q101
Width
9.35mm
Series
Automotive Grade
Energy Rating
300mJ
Automotive Standard
AEC-Q101
Λεπτομέρειες Προϊόντος
This application-specific IGBT utilizes the most Advanced PowerMESH™ technology optimized for Coil driving in the harsh environment of automotive ignition systems. These devices show very low on-state voltage and very high SCIS energy capability over a wide operating temperature range. Moreover, ESD-protected logic level gate input and an integrated gate resistor means no external protection circuitry is required