STMicroelectronics STGB50H65FB2 IGBT, 86 A 650 V, 3-Pin D2PAK (TO-263)
Τεχνικό φυλλάδιο
Προδιαγραφές
Brand
STMicroelectronicsMaximum Continuous Collector Current
86 A
Maximum Collector Emitter Voltage
650 V
Maximum Gate Emitter Voltage
±20V
Maximum Power Dissipation
272 W
Number of Transistors
1
Package Type
D2PAK (TO-263)
Pin Count
3
Χώρα Προέλευσης
China
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P.O.A.
Μονάδας (Σε ένα καρούλι των 1000) (Exc. Vat)Χωρίς Φ.Π.Α
1000
P.O.A.
Μονάδας (Σε ένα καρούλι των 1000) (Exc. Vat)Χωρίς Φ.Π.Α
1000
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Τεχνικό φυλλάδιο
Προδιαγραφές
Brand
STMicroelectronicsMaximum Continuous Collector Current
86 A
Maximum Collector Emitter Voltage
650 V
Maximum Gate Emitter Voltage
±20V
Maximum Power Dissipation
272 W
Number of Transistors
1
Package Type
D2PAK (TO-263)
Pin Count
3
Χώρα Προέλευσης
China
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
- View and contribute website content and forums
- Download 3D Models, Schematics and Footprints from more than a million products