STMicroelectronics STGP10NC60KD IGBT, 20 A 600 V, 3-Pin TO-220, Through Hole
Τεχνικό φυλλάδιο
Προδιαγραφές
Brand
STMicroelectronicsMaximum Continuous Collector Current
20 A
Maximum Collector Emitter Voltage
600 V
Maximum Gate Emitter Voltage
±20V
Package Type
TO-220
Mounting Type
Through Hole
Channel Type
N
Pin Count
3
Transistor Configuration
Single
Dimensions
10.4 x 4.6 x 9.15mm
Maximum Operating Temperature
+150 °C
Minimum Operating Temperature
-55 °C
Λεπτομέρειες Προϊόντος
IGBT Discretes, STMicroelectronics
IGBT Discretes & Modules, STMicroelectronics
The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.
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€ 1,49
Μονάδας (Σε ένα πακέτο των 5) (Exc. Vat)Χωρίς Φ.Π.Α
€ 1,848
Μονάδας (Σε ένα πακέτο των 5) (Including VAT) Με Φ.Π.Α
5
€ 1,49
Μονάδας (Σε ένα πακέτο των 5) (Exc. Vat)Χωρίς Φ.Π.Α
€ 1,848
Μονάδας (Σε ένα πακέτο των 5) (Including VAT) Με Φ.Π.Α
5
Αγοράστε μαζικά
Quantity Ποσότητα | Τιμή μονάδας | Per Πακέτο |
---|---|---|
5 - 20 | € 1,49 | € 7,45 |
25 - 45 | € 1,44 | € 7,20 |
50 - 120 | € 1,31 | € 6,55 |
125 - 245 | € 1,18 | € 5,90 |
250+ | € 1,16 | € 5,80 |
Τεχνικό φυλλάδιο
Προδιαγραφές
Brand
STMicroelectronicsMaximum Continuous Collector Current
20 A
Maximum Collector Emitter Voltage
600 V
Maximum Gate Emitter Voltage
±20V
Package Type
TO-220
Mounting Type
Through Hole
Channel Type
N
Pin Count
3
Transistor Configuration
Single
Dimensions
10.4 x 4.6 x 9.15mm
Maximum Operating Temperature
+150 °C
Minimum Operating Temperature
-55 °C
Λεπτομέρειες Προϊόντος
IGBT Discretes, STMicroelectronics
IGBT Discretes & Modules, STMicroelectronics
The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.