Τεχνικό φυλλάδιο
Προδιαγραφές
Brand
STMicroelectronicsProduct Type
IGBT
Maximum Continuous Collector Current Ic
30A
Maximum Collector Emitter Voltage Vceo
650V
Maximum Power Dissipation Pd
260W
Package Type
TO-247
Mount Type
Through Hole
Channel Type
Type N
Pin Count
3
Switching Speed
1MHz
Minimum Operating Temperature
-55°C
Maximum Gate Emitter Voltage VGEO
20 V
Maximum Collector Emitter Saturation Voltage VceSAT
2V
Maximum Operating Temperature
175°C
Standards/Approvals
RoHS
Series
STG
Length
15.9mm
Height
5.1mm
Automotive Standard
No
Λεπτομέρειες Προϊόντος
The STMicroelectronics high speed HB series IGBT developed using an advanced proprietary trench gate fieldstop structure. The device is part of the new HB series of IGBTs, which represents an optimum compromise between conduction and switching loss to maximize the efficiency of any frequency converter.
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Ημερομηνία αποθέματος προσωρινά μη διαθέσιμη
€ 20,75
€ 4,15 Μονάδας (Σε ένα πακέτο των 5) (Exc. Vat)Χωρίς Φ.Π.Α
€ 25,73
€ 5,146 Μονάδας (Σε ένα πακέτο των 5) Με Φ.Π.Α
Standard
5
€ 20,75
€ 4,15 Μονάδας (Σε ένα πακέτο των 5) (Exc. Vat)Χωρίς Φ.Π.Α
€ 25,73
€ 5,146 Μονάδας (Σε ένα πακέτο των 5) Με Φ.Π.Α
Ημερομηνία αποθέματος προσωρινά μη διαθέσιμη
Standard
5
| Quantity Ποσότητα | Τιμή μονάδας | Per Πακέτο |
|---|---|---|
| 5 - 45 | € 4,15 | € 20,75 |
| 50 - 120 | € 3,97 | € 19,85 |
| 125+ | € 3,84 | € 19,20 |
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
Τεχνικό φυλλάδιο
Προδιαγραφές
Brand
STMicroelectronicsProduct Type
IGBT
Maximum Continuous Collector Current Ic
30A
Maximum Collector Emitter Voltage Vceo
650V
Maximum Power Dissipation Pd
260W
Package Type
TO-247
Mount Type
Through Hole
Channel Type
Type N
Pin Count
3
Switching Speed
1MHz
Minimum Operating Temperature
-55°C
Maximum Gate Emitter Voltage VGEO
20 V
Maximum Collector Emitter Saturation Voltage VceSAT
2V
Maximum Operating Temperature
175°C
Standards/Approvals
RoHS
Series
STG
Length
15.9mm
Height
5.1mm
Automotive Standard
No
Λεπτομέρειες Προϊόντος
The STMicroelectronics high speed HB series IGBT developed using an advanced proprietary trench gate fieldstop structure. The device is part of the new HB series of IGBTs, which represents an optimum compromise between conduction and switching loss to maximize the efficiency of any frequency converter.
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
