STMicroelectronics STGWT15H60F IGBT, 30 A @ +25°C 600 V, 3-Pin TO, Through Hole

Κωδικός Προϊόντος της RS: 165-3261Κατασκευαστής: STMicroelectronicsΚωδικός Κατασκευαστή: STGWT15H60F
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Τεχνικό φυλλάδιο

Προδιαγραφές

Maximum Continuous Collector Current

30 A @ +25°C

Maximum Collector Emitter Voltage

600 V

Maximum Gate Emitter Voltage

±20V

Number of Transistors

1

Maximum Power Dissipation

115 W

Package Type

TO

Mounting Type

Through Hole

Channel Type

N

Pin Count

3

Switching Speed

1MHz

Transistor Configuration

Single

Dimensions

15.8 x 5 x 20.1mm

Energy Rating

553mJ

Maximum Operating Temperature

+175 °C

Minimum Operating Temperature

-55 °C

Gate Capacitance

1952pF

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STMicroelectronics STGWT15H60F IGBT, 30 A @ +25°C 600 V, 3-Pin TO, Through Hole
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P.O.A.

STMicroelectronics STGWT15H60F IGBT, 30 A @ +25°C 600 V, 3-Pin TO, Through Hole
Ημερομηνία αποθέματος προσωρινά μη διαθέσιμη
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Ideate. Create. Collaborate

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  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more

Τεχνικό φυλλάδιο

Προδιαγραφές

Maximum Continuous Collector Current

30 A @ +25°C

Maximum Collector Emitter Voltage

600 V

Maximum Gate Emitter Voltage

±20V

Number of Transistors

1

Maximum Power Dissipation

115 W

Package Type

TO

Mounting Type

Through Hole

Channel Type

N

Pin Count

3

Switching Speed

1MHz

Transistor Configuration

Single

Dimensions

15.8 x 5 x 20.1mm

Energy Rating

553mJ

Maximum Operating Temperature

+175 °C

Minimum Operating Temperature

-55 °C

Gate Capacitance

1952pF

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more