STMicroelectronics Type N-Channel MOSFET, 110 A, 100 V Enhancement, 3-Pin H2PAK STH150N10F7-2

Κωδικός Προϊόντος της RS: 860-7523Κατασκευαστής: STMicroelectronicsΚωδικός Κατασκευαστή: STH150N10F7-2
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Τεχνικό φυλλάδιο

Προδιαγραφές

Product Type

MOSFET

Channel Type

Type N

Maximum Continuous Drain Current Id

110A

Maximum Drain Source Voltage Vds

100V

Package Type

H2PAK

Mount Type

Surface

Pin Count

3

Maximum Drain Source Resistance Rds

3.9mΩ

Channel Mode

Enhancement

Maximum Power Dissipation Pd

250W

Maximum Gate Source Voltage Vgs

20 V

Minimum Operating Temperature

-55°C

Typical Gate Charge Qg @ Vgs

117nC

Forward Voltage Vf

1.2V

Maximum Operating Temperature

175°C

Width

10.57 mm

Height

4.8mm

Length

10.4mm

Standards/Approvals

No

Automotive Standard

No

Λεπτομέρειες Προϊόντος

N-Channel STripFET™ DeepGate™, STMicroelectronics

STripFET™ MOSFETs with a wide breakdown voltage range offer ultra-low gate charge and low on-resistance.

MOSFET Transistors, STMicroelectronics

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Ημερομηνία αποθέματος προσωρινά μη διαθέσιμη

€ 10,12

€ 5,06 Μονάδας (Σε ένα πακέτο των 2) (Exc. Vat)Χωρίς Φ.Π.Α

€ 12,55

€ 6,274 Μονάδας (Σε ένα πακέτο των 2) Με Φ.Π.Α

STMicroelectronics Type N-Channel MOSFET, 110 A, 100 V Enhancement, 3-Pin H2PAK STH150N10F7-2
Επιλέγξτε συσκευασία

€ 10,12

€ 5,06 Μονάδας (Σε ένα πακέτο των 2) (Exc. Vat)Χωρίς Φ.Π.Α

€ 12,55

€ 6,274 Μονάδας (Σε ένα πακέτο των 2) Με Φ.Π.Α

STMicroelectronics Type N-Channel MOSFET, 110 A, 100 V Enhancement, 3-Pin H2PAK STH150N10F7-2

Ημερομηνία αποθέματος προσωρινά μη διαθέσιμη

Επιλέγξτε συσκευασία

Quantity ΠοσότηταΤιμή μονάδαςPer Πακέτο
2 - 8€ 5,06€ 10,12
10 - 18€ 4,88€ 9,76
20 - 48€ 4,46€ 8,92
50 - 98€ 4,07€ 8,14
100+€ 3,94€ 7,88

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more

Τεχνικό φυλλάδιο

Προδιαγραφές

Product Type

MOSFET

Channel Type

Type N

Maximum Continuous Drain Current Id

110A

Maximum Drain Source Voltage Vds

100V

Package Type

H2PAK

Mount Type

Surface

Pin Count

3

Maximum Drain Source Resistance Rds

3.9mΩ

Channel Mode

Enhancement

Maximum Power Dissipation Pd

250W

Maximum Gate Source Voltage Vgs

20 V

Minimum Operating Temperature

-55°C

Typical Gate Charge Qg @ Vgs

117nC

Forward Voltage Vf

1.2V

Maximum Operating Temperature

175°C

Width

10.57 mm

Height

4.8mm

Length

10.4mm

Standards/Approvals

No

Automotive Standard

No

Λεπτομέρειες Προϊόντος

N-Channel STripFET™ DeepGate™, STMicroelectronics

STripFET™ MOSFETs with a wide breakdown voltage range offer ultra-low gate charge and low on-resistance.

MOSFET Transistors, STMicroelectronics

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more