STMicroelectronics STH200 Type N-Channel MOSFET, 180 A, 100 V Enhancement, 3-Pin H2PAK-2 STH200N10WF7-2

Κωδικός Προϊόντος της RS: 234-8895Κατασκευαστής: STMicroelectronicsΚωδικός Κατασκευαστή: STH200N10WF7-2
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Προβολή όλων σε MOSFETs

Τεχνικό φυλλάδιο

Προδιαγραφές

Brand

STMicroelectronics

Product Type

MOSFET

Channel Type

Type N

Maximum Continuous Drain Current Id

180A

Maximum Drain Source Voltage Vds

100V

Package Type

H2PAK-2

Series

STH200

Mount Type

Surface

Pin Count

3

Maximum Drain Source Resistance Rds

4mΩ

Channel Mode

Enhancement

Typical Gate Charge Qg @ Vgs

93nC

Maximum Power Dissipation Pd

340W

Maximum Gate Source Voltage Vgs

20 V

Minimum Operating Temperature

-55°C

Forward Voltage Vf

1.2V

Maximum Operating Temperature

175°C

Standards/Approvals

No

Automotive Standard

No

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Προβολή όλων σε MOSFETs

Ημερομηνία αποθέματος προσωρινά μη διαθέσιμη

€ 7.880,00

€ 7,88 Μονάδας (Σε ένα καρούλι των 1000) (Exc. Vat)Χωρίς Φ.Π.Α

€ 9.771,20

€ 9,771 Μονάδας (Σε ένα καρούλι των 1000) Με Φ.Π.Α

STMicroelectronics STH200 Type N-Channel MOSFET, 180 A, 100 V Enhancement, 3-Pin H2PAK-2 STH200N10WF7-2

1000

Διατίθεται σε πολλαπλάσια από 1000
1000€ 7.880,00
2000€ 15.760,00
3000€ 23.640,00
4000€ 31.520,00
5000€ 39.400,00
6000€ 47.280,00
7000€ 55.160,00
8000€ 63.040,00
9000€ 70.920,00
10000€ 78.800,00
11000€ 86.680,00
12000€ 94.560,00
13000€ 102.440,00
14000€ 110.320,00
15000€ 118.200,00

€ 7.880,00

€ 7,88 Μονάδας (Σε ένα καρούλι των 1000) (Exc. Vat)Χωρίς Φ.Π.Α

€ 9.771,20

€ 9,771 Μονάδας (Σε ένα καρούλι των 1000) Με Φ.Π.Α

STMicroelectronics STH200 Type N-Channel MOSFET, 180 A, 100 V Enhancement, 3-Pin H2PAK-2 STH200N10WF7-2

Ημερομηνία αποθέματος προσωρινά μη διαθέσιμη

1000

Διατίθεται σε πολλαπλάσια από 1000
1000€ 7.880,00
2000€ 15.760,00
3000€ 23.640,00
4000€ 31.520,00
5000€ 39.400,00
6000€ 47.280,00
7000€ 55.160,00
8000€ 63.040,00
9000€ 70.920,00
10000€ 78.800,00
11000€ 86.680,00
12000€ 94.560,00
13000€ 102.440,00
14000€ 110.320,00
15000€ 118.200,00

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more

Τεχνικό φυλλάδιο

Προδιαγραφές

Brand

STMicroelectronics

Product Type

MOSFET

Channel Type

Type N

Maximum Continuous Drain Current Id

180A

Maximum Drain Source Voltage Vds

100V

Package Type

H2PAK-2

Series

STH200

Mount Type

Surface

Pin Count

3

Maximum Drain Source Resistance Rds

4mΩ

Channel Mode

Enhancement

Typical Gate Charge Qg @ Vgs

93nC

Maximum Power Dissipation Pd

340W

Maximum Gate Source Voltage Vgs

20 V

Minimum Operating Temperature

-55°C

Forward Voltage Vf

1.2V

Maximum Operating Temperature

175°C

Standards/Approvals

No

Automotive Standard

No

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more