STMicroelectronics STripFET H7 N-Channel MOSFET, 180 A, 80 V, 7-Pin H2PAK-6 STH270N8F7-6

Κωδικός Προϊόντος της RS: 792-5858Κατασκευαστής: STMicroelectronicsΚωδικός Κατασκευαστή: STH270N8F7-6
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Προβολή όλων σε MOSFETs

Τεχνικό φυλλάδιο

Προδιαγραφές

Channel Type

N

Maximum Continuous Drain Current

180 A

Maximum Drain Source Voltage

80 V

Series

STripFET H7

Package Type

H2PAK-6

Mounting Type

Surface Mount

Pin Count

7

Maximum Drain Source Resistance

21 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

4V

Minimum Gate Threshold Voltage

2V

Maximum Power Dissipation

315 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-20 V, +20 V

Width

15.25mm

Transistor Material

Si

Number of Elements per Chip

1

Length

10.4mm

Typical Gate Charge @ Vgs

193 nC @ 10 V

Maximum Operating Temperature

+175 °C

Height

4.8mm

Minimum Operating Temperature

-55 °C

Λεπτομέρειες Προϊόντος

N-Channel STripFET™ H7 Series, STMicroelectronics

STripFET™ MOSFETs with a wide breakdown voltage range offer ultra-low gate charge and low on-resistance.

MOSFET Transistors, STMicroelectronics

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STMicroelectronics STripFET H7 Type N-Channel MOSFET, 180 A, 100 V Enhancement, 7-Pin H2PAK STH310N10F7-6
€ 8,345Μονάδας (Σε ένα πακέτο των 2) (Exc. Vat)Χωρίς Φ.Π.Α

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P.O.A.

Μονάδας (Σε ένα πακέτο των 2) (Exc. Vat)Χωρίς Φ.Π.Α

STMicroelectronics STripFET H7 N-Channel MOSFET, 180 A, 80 V, 7-Pin H2PAK-6 STH270N8F7-6

P.O.A.

Μονάδας (Σε ένα πακέτο των 2) (Exc. Vat)Χωρίς Φ.Π.Α

STMicroelectronics STripFET H7 N-Channel MOSFET, 180 A, 80 V, 7-Pin H2PAK-6 STH270N8F7-6

Ημερομηνία αποθέματος προσωρινά μη διαθέσιμη

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more
Μπορεί να σας ενδιαφέρει
STMicroelectronics STripFET H7 Type N-Channel MOSFET, 180 A, 100 V Enhancement, 7-Pin H2PAK STH310N10F7-6
€ 8,345Μονάδας (Σε ένα πακέτο των 2) (Exc. Vat)Χωρίς Φ.Π.Α

Τεχνικό φυλλάδιο

Προδιαγραφές

Channel Type

N

Maximum Continuous Drain Current

180 A

Maximum Drain Source Voltage

80 V

Series

STripFET H7

Package Type

H2PAK-6

Mounting Type

Surface Mount

Pin Count

7

Maximum Drain Source Resistance

21 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

4V

Minimum Gate Threshold Voltage

2V

Maximum Power Dissipation

315 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-20 V, +20 V

Width

15.25mm

Transistor Material

Si

Number of Elements per Chip

1

Length

10.4mm

Typical Gate Charge @ Vgs

193 nC @ 10 V

Maximum Operating Temperature

+175 °C

Height

4.8mm

Minimum Operating Temperature

-55 °C

Λεπτομέρειες Προϊόντος

N-Channel STripFET™ H7 Series, STMicroelectronics

STripFET™ MOSFETs with a wide breakdown voltage range offer ultra-low gate charge and low on-resistance.

MOSFET Transistors, STMicroelectronics

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more
Μπορεί να σας ενδιαφέρει
STMicroelectronics STripFET H7 Type N-Channel MOSFET, 180 A, 100 V Enhancement, 7-Pin H2PAK STH310N10F7-6
€ 8,345Μονάδας (Σε ένα πακέτο των 2) (Exc. Vat)Χωρίς Φ.Π.Α