STMicroelectronics STripFET H7 Type N-Channel MOSFET, 180 A, 100 V Enhancement, 7-Pin H2PAK

Κωδικός Προϊόντος της RS: 103-2006Κατασκευαστής: STMicroelectronicsΚωδικός Κατασκευαστή: STH310N10F7-6
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Προβολή όλων σε MOSFETs

Τεχνικό φυλλάδιο

Προδιαγραφές

Product Type

MOSFET

Channel Type

Type N

Maximum Continuous Drain Current Id

180A

Maximum Drain Source Voltage Vds

100V

Package Type

H2PAK

Series

STripFET H7

Mount Type

Surface

Pin Count

7

Maximum Drain Source Resistance Rds

2.3mΩ

Channel Mode

Enhancement

Maximum Power Dissipation Pd

315W

Maximum Gate Source Voltage Vgs

20 V

Minimum Operating Temperature

-55°C

Typical Gate Charge Qg @ Vgs

180nC

Forward Voltage Vf

1.3V

Maximum Operating Temperature

175°C

Width

10.4 mm

Height

4.8mm

Length

15.25mm

Standards/Approvals

No

Automotive Standard

No

Λεπτομέρειες Προϊόντος

N-Channel STripFET™ H7 Series, STMicroelectronics

STripFET™ MOSFETs with a wide breakdown voltage range offer ultra-low gate charge and low on-resistance.

MOSFET Transistors, STMicroelectronics

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Ημερομηνία αποθέματος προσωρινά μη διαθέσιμη

€ 6.710,00

€ 6,71 Μονάδας (Σε ένα καρούλι των 1000) (Exc. Vat)Χωρίς Φ.Π.Α

€ 8.320,40

€ 8,32 Μονάδας (Σε ένα καρούλι των 1000) Με Φ.Π.Α

STMicroelectronics STripFET H7 Type N-Channel MOSFET, 180 A, 100 V Enhancement, 7-Pin H2PAK

€ 6.710,00

€ 6,71 Μονάδας (Σε ένα καρούλι των 1000) (Exc. Vat)Χωρίς Φ.Π.Α

€ 8.320,40

€ 8,32 Μονάδας (Σε ένα καρούλι των 1000) Με Φ.Π.Α

STMicroelectronics STripFET H7 Type N-Channel MOSFET, 180 A, 100 V Enhancement, 7-Pin H2PAK

Ημερομηνία αποθέματος προσωρινά μη διαθέσιμη

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more

Τεχνικό φυλλάδιο

Προδιαγραφές

Product Type

MOSFET

Channel Type

Type N

Maximum Continuous Drain Current Id

180A

Maximum Drain Source Voltage Vds

100V

Package Type

H2PAK

Series

STripFET H7

Mount Type

Surface

Pin Count

7

Maximum Drain Source Resistance Rds

2.3mΩ

Channel Mode

Enhancement

Maximum Power Dissipation Pd

315W

Maximum Gate Source Voltage Vgs

20 V

Minimum Operating Temperature

-55°C

Typical Gate Charge Qg @ Vgs

180nC

Forward Voltage Vf

1.3V

Maximum Operating Temperature

175°C

Width

10.4 mm

Height

4.8mm

Length

15.25mm

Standards/Approvals

No

Automotive Standard

No

Λεπτομέρειες Προϊόντος

N-Channel STripFET™ H7 Series, STMicroelectronics

STripFET™ MOSFETs with a wide breakdown voltage range offer ultra-low gate charge and low on-resistance.

MOSFET Transistors, STMicroelectronics

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more