STMicroelectronics STH N channel-Channel Power MOSFET, 397 A, 60 V Enhancement, 2-Pin H2PAK-2 STH345N6F7-2

Κωδικός Προϊόντος της RS: 719-651Κατασκευαστής: STMicroelectronicsΚωδικός Κατασκευαστή: STH345N6F7-2
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Προβολή όλων σε MOSFETs

Τεχνικό φυλλάδιο

Προδιαγραφές

Brand

STMicroelectronics

Product Type

Power MOSFET

Channel Type

N channel

Maximum Continuous Drain Current Id

397A

Maximum Drain Source Voltage Vds

60V

Package Type

H2PAK-2

Series

STH

Mount Type

Surface Mount

Pin Count

2

Maximum Drain Source Resistance Rds

1.2mΩ

Channel Mode

Enhancement

Typical Gate Charge Qg @ Vgs

230nC

Maximum Power Dissipation Pd

341W

Minimum Operating Temperature

-55°C

Forward Voltage Vf

1.2V

Maximum Operating Temperature

175°C

Length

9.3mm

Height

4.7mm

Χώρα Προέλευσης

China

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Προβολή όλων σε MOSFETs

Ημερομηνία αποθέματος προσωρινά μη διαθέσιμη

€ 3.810,00

€ 3,81 Μονάδας (Σε ένα καρούλι των 1000) (Exc. Vat)Χωρίς Φ.Π.Α

€ 4.724,40

€ 4,724 Μονάδας (Σε ένα καρούλι των 1000) Με Φ.Π.Α

STMicroelectronics STH N channel-Channel Power MOSFET, 397 A, 60 V Enhancement, 2-Pin H2PAK-2 STH345N6F7-2

1000

Διατίθεται σε πολλαπλάσια από 1000
1000€ 3.810,00
2000€ 7.620,00
3000€ 11.430,00
4000€ 15.240,00
5000€ 19.050,00
6000€ 22.860,00
7000€ 26.670,00
8000€ 30.480,00
9000€ 34.290,00
10000€ 38.100,00
11000€ 41.910,00
12000€ 45.720,00
13000€ 49.530,00
14000€ 53.340,00
15000€ 57.150,00

€ 3.810,00

€ 3,81 Μονάδας (Σε ένα καρούλι των 1000) (Exc. Vat)Χωρίς Φ.Π.Α

€ 4.724,40

€ 4,724 Μονάδας (Σε ένα καρούλι των 1000) Με Φ.Π.Α

STMicroelectronics STH N channel-Channel Power MOSFET, 397 A, 60 V Enhancement, 2-Pin H2PAK-2 STH345N6F7-2

Ημερομηνία αποθέματος προσωρινά μη διαθέσιμη

1000

Διατίθεται σε πολλαπλάσια από 1000
1000€ 3.810,00
2000€ 7.620,00
3000€ 11.430,00
4000€ 15.240,00
5000€ 19.050,00
6000€ 22.860,00
7000€ 26.670,00
8000€ 30.480,00
9000€ 34.290,00
10000€ 38.100,00
11000€ 41.910,00
12000€ 45.720,00
13000€ 49.530,00
14000€ 53.340,00
15000€ 57.150,00

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more

Τεχνικό φυλλάδιο

Προδιαγραφές

Brand

STMicroelectronics

Product Type

Power MOSFET

Channel Type

N channel

Maximum Continuous Drain Current Id

397A

Maximum Drain Source Voltage Vds

60V

Package Type

H2PAK-2

Series

STH

Mount Type

Surface Mount

Pin Count

2

Maximum Drain Source Resistance Rds

1.2mΩ

Channel Mode

Enhancement

Typical Gate Charge Qg @ Vgs

230nC

Maximum Power Dissipation Pd

341W

Minimum Operating Temperature

-55°C

Forward Voltage Vf

1.2V

Maximum Operating Temperature

175°C

Length

9.3mm

Height

4.7mm

Χώρα Προέλευσης

China

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more