STMicroelectronics STripFET F7 N-Channel MOSFET, 140 A, 60 V, 8-Pin PowerFLAT 5 x 6 STL140N6F7
Τεχνικό φυλλάδιο
Προδιαγραφές
Brand
STMicroelectronicsChannel Type
N
Maximum Continuous Drain Current
140 A
Maximum Drain Source Voltage
60 V
Series
STripFET F7
Package Type
PowerFLAT 5 x 6
Mounting Type
Surface Mount
Pin Count
8
Maximum Drain Source Resistance
2 mΩ
Channel Mode
Enhancement
Maximum Power Dissipation
125 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Number of Elements per Chip
1
Width
5.2mm
Typical Gate Charge @ Vgs
55 nC @ 10 V
Transistor Material
Si
Maximum Operating Temperature
+175 °C
Length
6.15mm
Minimum Operating Temperature
-55 °C
Forward Diode Voltage
1.2V
Height
0.95mm
Χώρα Προέλευσης
China
Λεπτομέρειες Προϊόντος
N-Channel STripFET™ F7 Series, STMicroelectronics
The STMicroelectronics STripFET™ F7 series of low-voltage MOSFETs have lower device on-state resistance, with reduced internal capacitance and gate charge for faster and more efficient switching.
MOSFET Transistors, STMicroelectronics
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€ 6.720,00
€ 2,24 Μονάδας (Σε ένα καρούλι των 3000) (Exc. Vat)Χωρίς Φ.Π.Α
€ 8.332,80
€ 2,778 Μονάδας (Σε ένα καρούλι των 3000) Με Φ.Π.Α
3000
€ 6.720,00
€ 2,24 Μονάδας (Σε ένα καρούλι των 3000) (Exc. Vat)Χωρίς Φ.Π.Α
€ 8.332,80
€ 2,778 Μονάδας (Σε ένα καρούλι των 3000) Με Φ.Π.Α
Ημερομηνία αποθέματος προσωρινά μη διαθέσιμη
3000
Ημερομηνία αποθέματος προσωρινά μη διαθέσιμη
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
- View and contribute website content and forums
- Download 3D Models, Schematics and Footprints from more than a million products
Τεχνικό φυλλάδιο
Προδιαγραφές
Brand
STMicroelectronicsChannel Type
N
Maximum Continuous Drain Current
140 A
Maximum Drain Source Voltage
60 V
Series
STripFET F7
Package Type
PowerFLAT 5 x 6
Mounting Type
Surface Mount
Pin Count
8
Maximum Drain Source Resistance
2 mΩ
Channel Mode
Enhancement
Maximum Power Dissipation
125 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Number of Elements per Chip
1
Width
5.2mm
Typical Gate Charge @ Vgs
55 nC @ 10 V
Transistor Material
Si
Maximum Operating Temperature
+175 °C
Length
6.15mm
Minimum Operating Temperature
-55 °C
Forward Diode Voltage
1.2V
Height
0.95mm
Χώρα Προέλευσης
China
Λεπτομέρειες Προϊόντος
N-Channel STripFET™ F7 Series, STMicroelectronics
The STMicroelectronics STripFET™ F7 series of low-voltage MOSFETs have lower device on-state resistance, with reduced internal capacitance and gate charge for faster and more efficient switching.
MOSFET Transistors, STMicroelectronics
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
- View and contribute website content and forums
- Download 3D Models, Schematics and Footprints from more than a million products