STMicroelectronics MDmesh M5 N-Channel MOSFET, 15 A, 710 V, 8-Pin PowerFLAT 5 x 6 STL18N65M5

Τεχνικό φυλλάδιο
Προδιαγραφές
Brand
STMicroelectronicsChannel Type
N
Maximum Continuous Drain Current
15 A
Maximum Drain Source Voltage
710 V
Series
MDmesh M5
Package Type
PowerFLAT 5 x 6
Mounting Type
Surface Mount
Pin Count
8
Maximum Drain Source Resistance
240 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
5V
Minimum Gate Threshold Voltage
3V
Maximum Power Dissipation
57 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-25 V, +25 V
Width
6.35mm
Transistor Material
Si
Number of Elements per Chip
1
Length
5.4mm
Typical Gate Charge @ Vgs
31 nC @ 10 V
Maximum Operating Temperature
+150 °C
Height
1mm
Λεπτομέρειες Προϊόντος
N-channel MDmesh™ M5 Series, STMicroelectronics
The MDmesh M5 power MOSFETs are optimised for high-power PFC and PWM topologies. Main features include a low on-state losses per silicon area combined with low gate charge. They are designed for energy-conscious, compact and reliable hard switching applications, such as solar power converters, power supplies for consumer products and electronic lighting controls.
MOSFET Transistors, STMicroelectronics
€ 7,62
€ 3,81 Μονάδας (διαθέσιμο σε ένα καρούλι) (Exc. Vat)Χωρίς Φ.Π.Α
€ 9,45
€ 4,724 Μονάδας (διαθέσιμο σε ένα καρούλι) Με Φ.Π.Α
Συσκευασία Παραγωγής (Καρούλι)
2
€ 7,62
€ 3,81 Μονάδας (διαθέσιμο σε ένα καρούλι) (Exc. Vat)Χωρίς Φ.Π.Α
€ 9,45
€ 4,724 Μονάδας (διαθέσιμο σε ένα καρούλι) Με Φ.Π.Α
Ημερομηνία αποθέματος προσωρινά μη διαθέσιμη
Συσκευασία Παραγωγής (Καρούλι)
2
Ημερομηνία αποθέματος προσωρινά μη διαθέσιμη
Τεχνικό φυλλάδιο
Προδιαγραφές
Brand
STMicroelectronicsChannel Type
N
Maximum Continuous Drain Current
15 A
Maximum Drain Source Voltage
710 V
Series
MDmesh M5
Package Type
PowerFLAT 5 x 6
Mounting Type
Surface Mount
Pin Count
8
Maximum Drain Source Resistance
240 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
5V
Minimum Gate Threshold Voltage
3V
Maximum Power Dissipation
57 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-25 V, +25 V
Width
6.35mm
Transistor Material
Si
Number of Elements per Chip
1
Length
5.4mm
Typical Gate Charge @ Vgs
31 nC @ 10 V
Maximum Operating Temperature
+150 °C
Height
1mm
Λεπτομέρειες Προϊόντος
N-channel MDmesh™ M5 Series, STMicroelectronics
The MDmesh M5 power MOSFETs are optimised for high-power PFC and PWM topologies. Main features include a low on-state losses per silicon area combined with low gate charge. They are designed for energy-conscious, compact and reliable hard switching applications, such as solar power converters, power supplies for consumer products and electronic lighting controls.