STMicroelectronics N-Channel MOSFET, 40 A, 30 V, 8-Pin PowerFLAT 5 x 6 STL40DN3LLH5

Κωδικός Προϊόντος της RS: 188-8491Κατασκευαστής: STMicroelectronicsΚωδικός Κατασκευαστή: STL40DN3LLH5
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Προβολή όλων σε MOSFETs

Τεχνικό φυλλάδιο

Προδιαγραφές

Channel Type

N

Maximum Continuous Drain Current

40 A

Maximum Drain Source Voltage

30 V

Package Type

PowerFLAT 5 x 6

Mounting Type

Surface Mount

Pin Count

8

Maximum Drain Source Resistance

25 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

1.5V

Minimum Gate Threshold Voltage

1V

Maximum Power Dissipation

50 W

Transistor Configuration

Single

Maximum Gate Source Voltage

±22 V

Number of Elements per Chip

1

Width

5.1mm

Length

6.2mm

Typical Gate Charge @ Vgs

4.5 nC @ 4.5 V

Maximum Operating Temperature

+175 °C

Minimum Operating Temperature

-55 °C

Forward Diode Voltage

1.1V

Height

0.95mm

Automotive Standard

AEC-Q101

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€ 13,80

€ 1,38 Μονάδας (Σε ένα πακέτο των 10) (Exc. Vat)Χωρίς Φ.Π.Α

€ 17,11

€ 1,711 Μονάδας (Σε ένα πακέτο των 10) Με Φ.Π.Α

STMicroelectronics N-Channel MOSFET, 40 A, 30 V, 8-Pin PowerFLAT 5 x 6 STL40DN3LLH5
Επιλέγξτε συσκευασία

€ 13,80

€ 1,38 Μονάδας (Σε ένα πακέτο των 10) (Exc. Vat)Χωρίς Φ.Π.Α

€ 17,11

€ 1,711 Μονάδας (Σε ένα πακέτο των 10) Με Φ.Π.Α

STMicroelectronics N-Channel MOSFET, 40 A, 30 V, 8-Pin PowerFLAT 5 x 6 STL40DN3LLH5

Ημερομηνία αποθέματος προσωρινά μη διαθέσιμη

Επιλέγξτε συσκευασία

Ημερομηνία αποθέματος προσωρινά μη διαθέσιμη

Quantity ΠοσότηταΤιμή μονάδαςPer Πακέτο
10 - 40€ 1,38€ 13,80
50 - 90€ 1,33€ 13,30
100 - 240€ 1,20€ 12,00
250 - 490€ 1,10€ 11,00
500+€ 1,07€ 10,70

Ideate. Create. Collaborate

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  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
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  • Download 3D Models, Schematics and Footprints from more than a million products
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Τεχνικό φυλλάδιο

Προδιαγραφές

Channel Type

N

Maximum Continuous Drain Current

40 A

Maximum Drain Source Voltage

30 V

Package Type

PowerFLAT 5 x 6

Mounting Type

Surface Mount

Pin Count

8

Maximum Drain Source Resistance

25 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

1.5V

Minimum Gate Threshold Voltage

1V

Maximum Power Dissipation

50 W

Transistor Configuration

Single

Maximum Gate Source Voltage

±22 V

Number of Elements per Chip

1

Width

5.1mm

Length

6.2mm

Typical Gate Charge @ Vgs

4.5 nC @ 4.5 V

Maximum Operating Temperature

+175 °C

Minimum Operating Temperature

-55 °C

Forward Diode Voltage

1.1V

Height

0.95mm

Automotive Standard

AEC-Q101

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more