P-Channel MOSFET, 60 A, 40 V, 8-Pin PowerFLAT 5 x 6 STMicroelectronics STL60P4LLF6
Τεχνικό φυλλάδιο
Προδιαγραφές
Brand
STMicroelectronicsChannel Type
P
Maximum Continuous Drain Current
60 A
Maximum Drain Source Voltage
40 V
Package Type
PowerFLAT 5 x 6
Series
STripFET
Mounting Type
Surface Mount
Pin Count
8
Maximum Drain Source Resistance
19 mΩ
Channel Mode
Enhancement
Minimum Gate Threshold Voltage
1V
Maximum Power Dissipation
100 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Width
5.4mm
Number of Elements per Chip
1
Maximum Operating Temperature
+175 °C
Transistor Material
Si
Length
6.35mm
Typical Gate Charge @ Vgs
34 nC @ 4.5 V
Height
0.95mm
Forward Diode Voltage
1.1V
Χώρα Προέλευσης
China
Λεπτομέρειες Προϊόντος
P-Channel STripFET™ Power MOSFET, STMicroelectronics
STripFET™ MOSFETs with a wide breakdown voltage range offer ultra-low gate charge and low on-resistance.
MOSFET Transistors, STMicroelectronics
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Ημερομηνία αποθέματος προσωρινά μη διαθέσιμη
Παρακαλούμε ελέγξτε ξανά αργότερα.
€ 3.630,00
€ 1,21 Μονάδας (Σε ένα καρούλι των 3000) (Exc. Vat)Χωρίς Φ.Π.Α
€ 4.501,20
€ 1,50 Μονάδας (Σε ένα καρούλι των 3000) Με Φ.Π.Α
3000
€ 3.630,00
€ 1,21 Μονάδας (Σε ένα καρούλι των 3000) (Exc. Vat)Χωρίς Φ.Π.Α
€ 4.501,20
€ 1,50 Μονάδας (Σε ένα καρούλι των 3000) Με Φ.Π.Α
3000
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
- View and contribute website content and forums
- Download 3D Models, Schematics and Footprints from more than a million products
Τεχνικό φυλλάδιο
Προδιαγραφές
Brand
STMicroelectronicsChannel Type
P
Maximum Continuous Drain Current
60 A
Maximum Drain Source Voltage
40 V
Package Type
PowerFLAT 5 x 6
Series
STripFET
Mounting Type
Surface Mount
Pin Count
8
Maximum Drain Source Resistance
19 mΩ
Channel Mode
Enhancement
Minimum Gate Threshold Voltage
1V
Maximum Power Dissipation
100 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Width
5.4mm
Number of Elements per Chip
1
Maximum Operating Temperature
+175 °C
Transistor Material
Si
Length
6.35mm
Typical Gate Charge @ Vgs
34 nC @ 4.5 V
Height
0.95mm
Forward Diode Voltage
1.1V
Χώρα Προέλευσης
China
Λεπτομέρειες Προϊόντος
P-Channel STripFET™ Power MOSFET, STMicroelectronics
STripFET™ MOSFETs with a wide breakdown voltage range offer ultra-low gate charge and low on-resistance.
MOSFET Transistors, STMicroelectronics
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
- View and contribute website content and forums
- Download 3D Models, Schematics and Footprints from more than a million products