STMicroelectronics STripFET F7 N-Channel MOSFET, 100 A, 60 V, 3-Pin TO-220 STP100N6F7
Τεχνικό φυλλάδιο
Προδιαγραφές
Brand
STMicroelectronicsChannel Type
N
Maximum Continuous Drain Current
100 A
Maximum Drain Source Voltage
60 V
Package Type
TO-220
Series
STripFET F7
Mounting Type
Through Hole
Pin Count
3
Maximum Drain Source Resistance
5.6 mΩ
Channel Mode
Enhancement
Maximum Power Dissipation
125 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Typical Gate Charge @ Vgs
12.6 nC @ 10 V
Transistor Material
Si
Maximum Operating Temperature
+175 °C
Width
4.6mm
Number of Elements per Chip
1
Length
10.4mm
Minimum Operating Temperature
-55 °C
Forward Diode Voltage
1.2V
Height
9.15mm
Χώρα Προέλευσης
China
Λεπτομέρειες Προϊόντος
N-Channel STripFET™ F7 Series, STMicroelectronics
The STMicroelectronics STripFET™ F7 series of low-voltage MOSFETs have lower device on-state resistance, with reduced internal capacitance and gate charge for faster and more efficient switching.
MOSFET Transistors, STMicroelectronics
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€ 83,50
€ 1,67 Μονάδας (Σε μία ράγα των 50) (Exc. Vat)Χωρίς Φ.Π.Α
€ 103,54
€ 2,071 Μονάδας (Σε μία ράγα των 50) Με Φ.Π.Α
50
€ 83,50
€ 1,67 Μονάδας (Σε μία ράγα των 50) (Exc. Vat)Χωρίς Φ.Π.Α
€ 103,54
€ 2,071 Μονάδας (Σε μία ράγα των 50) Με Φ.Π.Α
50
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Τεχνικό φυλλάδιο
Προδιαγραφές
Brand
STMicroelectronicsChannel Type
N
Maximum Continuous Drain Current
100 A
Maximum Drain Source Voltage
60 V
Package Type
TO-220
Series
STripFET F7
Mounting Type
Through Hole
Pin Count
3
Maximum Drain Source Resistance
5.6 mΩ
Channel Mode
Enhancement
Maximum Power Dissipation
125 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Typical Gate Charge @ Vgs
12.6 nC @ 10 V
Transistor Material
Si
Maximum Operating Temperature
+175 °C
Width
4.6mm
Number of Elements per Chip
1
Length
10.4mm
Minimum Operating Temperature
-55 °C
Forward Diode Voltage
1.2V
Height
9.15mm
Χώρα Προέλευσης
China
Λεπτομέρειες Προϊόντος
N-Channel STripFET™ F7 Series, STMicroelectronics
The STMicroelectronics STripFET™ F7 series of low-voltage MOSFETs have lower device on-state resistance, with reduced internal capacitance and gate charge for faster and more efficient switching.
MOSFET Transistors, STMicroelectronics
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
- View and contribute website content and forums
- Download 3D Models, Schematics and Footprints from more than a million products