STMicroelectronics MDmesh, SuperMESH N-Channel MOSFET, 8.6 A, 700 V, 3-Pin TO-220FP STP10NK70ZFP
Τεχνικό φυλλάδιο
Προδιαγραφές
Brand
STMicroelectronicsChannel Type
N
Maximum Continuous Drain Current
8.6 A
Maximum Drain Source Voltage
700 V
Series
MDmesh, SuperMESH
Package Type
TO-220FP
Mounting Type
Through Hole
Pin Count
3
Maximum Drain Source Resistance
850 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
4.5V
Minimum Gate Threshold Voltage
3V
Maximum Power Dissipation
35 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-30 V, +30 V
Transistor Material
Si
Number of Elements per Chip
1
Length
10.4mm
Typical Gate Charge @ Vgs
64 nC @ 10 V
Maximum Operating Temperature
+150 °C
Width
4.6mm
Height
16.4mm
Minimum Operating Temperature
-55 °C
Λεπτομέρειες Προϊόντος
N-Channel MDmesh™ SuperMESH™, 700V to 1200V, STMicroelectronics
MOSFET Transistors, STMicroelectronics
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€ 166,00
€ 3,32 Μονάδας (Σε μία ράγα των 50) (Exc. Vat)Χωρίς Φ.Π.Α
€ 205,84
€ 4,117 Μονάδας (Σε μία ράγα των 50) Με Φ.Π.Α
50
€ 166,00
€ 3,32 Μονάδας (Σε μία ράγα των 50) (Exc. Vat)Χωρίς Φ.Π.Α
€ 205,84
€ 4,117 Μονάδας (Σε μία ράγα των 50) Με Φ.Π.Α
50
Ημερομηνία αποθέματος προσωρινά μη διαθέσιμη
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| Quantity Ποσότητα | Τιμή μονάδας | Per Ράγα |
|---|---|---|
| 50 - 50 | € 3,32 | € 166,00 |
| 100 - 450 | € 2,69 | € 134,50 |
| 500 - 950 | € 2,43 | € 121,50 |
| 1000 - 4950 | € 2,09 | € 104,50 |
| 5000+ | € 2,04 | € 102,00 |
Ideate. Create. Collaborate
JOIN FOR FREE
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- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
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- Download 3D Models, Schematics and Footprints from more than a million products
Τεχνικό φυλλάδιο
Προδιαγραφές
Brand
STMicroelectronicsChannel Type
N
Maximum Continuous Drain Current
8.6 A
Maximum Drain Source Voltage
700 V
Series
MDmesh, SuperMESH
Package Type
TO-220FP
Mounting Type
Through Hole
Pin Count
3
Maximum Drain Source Resistance
850 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
4.5V
Minimum Gate Threshold Voltage
3V
Maximum Power Dissipation
35 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-30 V, +30 V
Transistor Material
Si
Number of Elements per Chip
1
Length
10.4mm
Typical Gate Charge @ Vgs
64 nC @ 10 V
Maximum Operating Temperature
+150 °C
Width
4.6mm
Height
16.4mm
Minimum Operating Temperature
-55 °C
Λεπτομέρειες Προϊόντος
N-Channel MDmesh™ SuperMESH™, 700V to 1200V, STMicroelectronics
MOSFET Transistors, STMicroelectronics
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
- View and contribute website content and forums
- Download 3D Models, Schematics and Footprints from more than a million products