Τεχνικό φυλλάδιο
Προδιαγραφές
Brand
STMicroelectronicsChannel Type
Type N
Product Type
MOSFET
Maximum Continuous Drain Current Id
110A
Maximum Drain Source Voltage Vds
100V
Package Type
TO-220
Mount Type
Through Hole
Pin Count
3
Maximum Drain Source Resistance Rds
4.2mΩ
Minimum Operating Temperature
-55°C
Forward Voltage Vf
1.2V
Typical Gate Charge Qg @ Vgs
127nC
Maximum Power Dissipation Pd
250W
Maximum Operating Temperature
175°C
Standards/Approvals
No
Automotive Standard
No
Λεπτομέρειες Προϊόντος
The STMicroelectronics N-channel Power MOSFET utilizes STripFET F7 technology with an enhanced trench gate structure that results in very low on-state resistance, while also reducing internal capacitance and gate charge for Faster and more efficient switching.
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Ημερομηνία αποθέματος προσωρινά μη διαθέσιμη
€ 219,50
€ 4,39 Μονάδας (Σε μία ράγα των 50) (Exc. Vat)Χωρίς Φ.Π.Α
€ 272,18
€ 5,444 Μονάδας (Σε μία ράγα των 50) Με Φ.Π.Α
50
€ 219,50
€ 4,39 Μονάδας (Σε μία ράγα των 50) (Exc. Vat)Χωρίς Φ.Π.Α
€ 272,18
€ 5,444 Μονάδας (Σε μία ράγα των 50) Με Φ.Π.Α
Ημερομηνία αποθέματος προσωρινά μη διαθέσιμη
50
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
Τεχνικό φυλλάδιο
Προδιαγραφές
Brand
STMicroelectronicsChannel Type
Type N
Product Type
MOSFET
Maximum Continuous Drain Current Id
110A
Maximum Drain Source Voltage Vds
100V
Package Type
TO-220
Mount Type
Through Hole
Pin Count
3
Maximum Drain Source Resistance Rds
4.2mΩ
Minimum Operating Temperature
-55°C
Forward Voltage Vf
1.2V
Typical Gate Charge Qg @ Vgs
127nC
Maximum Power Dissipation Pd
250W
Maximum Operating Temperature
175°C
Standards/Approvals
No
Automotive Standard
No
Λεπτομέρειες Προϊόντος
The STMicroelectronics N-channel Power MOSFET utilizes STripFET F7 technology with an enhanced trench gate structure that results in very low on-state resistance, while also reducing internal capacitance and gate charge for Faster and more efficient switching.
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
