Τεχνικό φυλλάδιο
Προδιαγραφές
Brand
STMicroelectronicsChannel Type
N
Maximum Continuous Drain Current
12 A
Maximum Drain Source Voltage
650 V
Package Type
TO-220
Series
MDmesh M5
Mounting Type
Through Hole
Pin Count
3
Maximum Drain Source Resistance
299 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
5V
Minimum Gate Threshold Voltage
3V
Maximum Power Dissipation
90 W
Transistor Configuration
Single
Maximum Gate Source Voltage
+25 V
Number of Elements per Chip
1
Length
10.4mm
Maximum Operating Temperature
+150 °C
Width
4.6mm
Transistor Material
Si
Typical Gate Charge @ Vgs
31 nC @ 10 V
Height
9.15mm
Minimum Operating Temperature
-55 °C
Λεπτομέρειες Προϊόντος
N-channel MDmesh™ M5 Series, STMicroelectronics
The MDmesh M5 power MOSFETs are optimised for high-power PFC and PWM topologies. Main features include a low on-state losses per silicon area combined with low gate charge. They are designed for energy-conscious, compact and reliable hard switching applications, such as solar power converters, power supplies for consumer products and electronic lighting controls.
MOSFET Transistors, STMicroelectronics
Ημερομηνία αποθέματος προσωρινά μη διαθέσιμη
€ 9,86
€ 4,93 Μονάδας (Σε ένα πακέτο των 2) (Exc. Vat)Χωρίς Φ.Π.Α
€ 12,23
€ 6,113 Μονάδας (Σε ένα πακέτο των 2) Με Φ.Π.Α
Standard
2
€ 9,86
€ 4,93 Μονάδας (Σε ένα πακέτο των 2) (Exc. Vat)Χωρίς Φ.Π.Α
€ 12,23
€ 6,113 Μονάδας (Σε ένα πακέτο των 2) Με Φ.Π.Α
Ημερομηνία αποθέματος προσωρινά μη διαθέσιμη
Standard
2
| Quantity Ποσότητα | Τιμή μονάδας | Per Πακέτο |
|---|---|---|
| 2 - 8 | € 4,93 | € 9,86 |
| 10 - 98 | € 4,88 | € 9,76 |
| 100 - 248 | € 4,80 | € 9,60 |
| 250 - 498 | € 4,78 | € 9,56 |
| 500+ | € 4,72 | € 9,44 |
Τεχνικό φυλλάδιο
Προδιαγραφές
Brand
STMicroelectronicsChannel Type
N
Maximum Continuous Drain Current
12 A
Maximum Drain Source Voltage
650 V
Package Type
TO-220
Series
MDmesh M5
Mounting Type
Through Hole
Pin Count
3
Maximum Drain Source Resistance
299 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
5V
Minimum Gate Threshold Voltage
3V
Maximum Power Dissipation
90 W
Transistor Configuration
Single
Maximum Gate Source Voltage
+25 V
Number of Elements per Chip
1
Length
10.4mm
Maximum Operating Temperature
+150 °C
Width
4.6mm
Transistor Material
Si
Typical Gate Charge @ Vgs
31 nC @ 10 V
Height
9.15mm
Minimum Operating Temperature
-55 °C
Λεπτομέρειες Προϊόντος
N-channel MDmesh™ M5 Series, STMicroelectronics
The MDmesh M5 power MOSFETs are optimised for high-power PFC and PWM topologies. Main features include a low on-state losses per silicon area combined with low gate charge. They are designed for energy-conscious, compact and reliable hard switching applications, such as solar power converters, power supplies for consumer products and electronic lighting controls.


