STMicroelectronics MDmesh M2 N-Channel MOSFET, 13 A, 650 V, 3-Pin TO-220 STP18N60M2
Τεχνικό φυλλάδιο
Προδιαγραφές
Brand
STMicroelectronicsChannel Type
N
Maximum Continuous Drain Current
13 A
Maximum Drain Source Voltage
650 V
Series
MDmesh M2
Package Type
TO-220
Mounting Type
Through Hole
Pin Count
3
Maximum Drain Source Resistance
280 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
4V
Minimum Gate Threshold Voltage
2V
Maximum Power Dissipation
110 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-25 V, +25 V
Length
10.4mm
Number of Elements per Chip
1
Width
4.6mm
Typical Gate Charge @ Vgs
21.5 nC @ 10 V
Transistor Material
Si
Maximum Operating Temperature
+150 °C
Height
15.75mm
Χώρα Προέλευσης
China
Λεπτομέρειες Προϊόντος
N-channel MDmesh™ M2 Series, STMicroelectronics
A range of high-voltage power MOSFETs from STMicroelecronics. With their low gate charge and excellent output capacitance characteristics, the MDmesh M2 series are perfect for use in resonant-type switching supplies (LLC converters).
MOSFET Transistors, STMicroelectronics
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Ημερομηνία αποθέματος προσωρινά μη διαθέσιμη
€ 96,50
€ 1,93 Μονάδας (Σε μία ράγα των 50) (Exc. Vat)Χωρίς Φ.Π.Α
€ 119,66
€ 2,393 Μονάδας (Σε μία ράγα των 50) Με Φ.Π.Α
50
€ 96,50
€ 1,93 Μονάδας (Σε μία ράγα των 50) (Exc. Vat)Χωρίς Φ.Π.Α
€ 119,66
€ 2,393 Μονάδας (Σε μία ράγα των 50) Με Φ.Π.Α
Ημερομηνία αποθέματος προσωρινά μη διαθέσιμη
50
| Quantity Ποσότητα | Τιμή μονάδας | Per Ράγα |
|---|---|---|
| 50 - 50 | € 1,93 | € 96,50 |
| 100 - 200 | € 1,57 | € 78,50 |
| 250+ | € 1,54 | € 77,00 |
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
- View and contribute website content and forums
- Download 3D Models, Schematics and Footprints from more than a million products
Τεχνικό φυλλάδιο
Προδιαγραφές
Brand
STMicroelectronicsChannel Type
N
Maximum Continuous Drain Current
13 A
Maximum Drain Source Voltage
650 V
Series
MDmesh M2
Package Type
TO-220
Mounting Type
Through Hole
Pin Count
3
Maximum Drain Source Resistance
280 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
4V
Minimum Gate Threshold Voltage
2V
Maximum Power Dissipation
110 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-25 V, +25 V
Length
10.4mm
Number of Elements per Chip
1
Width
4.6mm
Typical Gate Charge @ Vgs
21.5 nC @ 10 V
Transistor Material
Si
Maximum Operating Temperature
+150 °C
Height
15.75mm
Χώρα Προέλευσης
China
Λεπτομέρειες Προϊόντος
N-channel MDmesh™ M2 Series, STMicroelectronics
A range of high-voltage power MOSFETs from STMicroelecronics. With their low gate charge and excellent output capacitance characteristics, the MDmesh M2 series are perfect for use in resonant-type switching supplies (LLC converters).
MOSFET Transistors, STMicroelectronics
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
- View and contribute website content and forums
- Download 3D Models, Schematics and Footprints from more than a million products