STMicroelectronics MDmesh M2 N-Channel MOSFET, 13 A, 650 V, 3-Pin TO-220 STP18N60M2

Κωδικός Προϊόντος της RS: 791-7813Κατασκευαστής: STMicroelectronicsΚωδικός Κατασκευαστή: STP18N60M2
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Τεχνικό φυλλάδιο

Προδιαγραφές

Channel Type

N

Maximum Continuous Drain Current

13 A

Maximum Drain Source Voltage

650 V

Package Type

TO-220

Series

MDmesh M2

Mounting Type

Through Hole

Pin Count

3

Maximum Drain Source Resistance

280 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

4V

Minimum Gate Threshold Voltage

2V

Maximum Power Dissipation

110 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-25 V, +25 V

Typical Gate Charge @ Vgs

21.5 nC @ 10 V

Maximum Operating Temperature

+150 °C

Width

4.6mm

Transistor Material

Si

Number of Elements per Chip

1

Length

10.4mm

Height

15.75mm

Λεπτομέρειες Προϊόντος

N-channel MDmesh™ M2 Series, STMicroelectronics

A range of high-voltage power MOSFETs from STMicroelecronics. With their low gate charge and excellent output capacitance characteristics, the MDmesh M2 series are perfect for use in resonant-type switching supplies (LLC converters).

MOSFET Transistors, STMicroelectronics

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€ 15,65

€ 3,13 Μονάδας (Σε ένα πακέτο των 5) (Exc. Vat)Χωρίς Φ.Π.Α

€ 19,41

€ 3,881 Μονάδας (Σε ένα πακέτο των 5) Με Φ.Π.Α

STMicroelectronics MDmesh M2 N-Channel MOSFET, 13 A, 650 V, 3-Pin TO-220 STP18N60M2
Επιλέγξτε συσκευασία

€ 15,65

€ 3,13 Μονάδας (Σε ένα πακέτο των 5) (Exc. Vat)Χωρίς Φ.Π.Α

€ 19,41

€ 3,881 Μονάδας (Σε ένα πακέτο των 5) Με Φ.Π.Α

STMicroelectronics MDmesh M2 N-Channel MOSFET, 13 A, 650 V, 3-Pin TO-220 STP18N60M2

Ημερομηνία αποθέματος προσωρινά μη διαθέσιμη

Επιλέγξτε συσκευασία

Ημερομηνία αποθέματος προσωρινά μη διαθέσιμη

Quantity ΠοσότηταΤιμή μονάδαςPer Πακέτο
5 - 20€ 3,13€ 15,65
25 - 45€ 3,03€ 15,15
50 - 120€ 2,77€ 13,85
125 - 245€ 2,53€ 12,65
250+€ 2,43€ 12,15

Ideate. Create. Collaborate

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  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
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  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more

Τεχνικό φυλλάδιο

Προδιαγραφές

Channel Type

N

Maximum Continuous Drain Current

13 A

Maximum Drain Source Voltage

650 V

Package Type

TO-220

Series

MDmesh M2

Mounting Type

Through Hole

Pin Count

3

Maximum Drain Source Resistance

280 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

4V

Minimum Gate Threshold Voltage

2V

Maximum Power Dissipation

110 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-25 V, +25 V

Typical Gate Charge @ Vgs

21.5 nC @ 10 V

Maximum Operating Temperature

+150 °C

Width

4.6mm

Transistor Material

Si

Number of Elements per Chip

1

Length

10.4mm

Height

15.75mm

Λεπτομέρειες Προϊόντος

N-channel MDmesh™ M2 Series, STMicroelectronics

A range of high-voltage power MOSFETs from STMicroelecronics. With their low gate charge and excellent output capacitance characteristics, the MDmesh M2 series are perfect for use in resonant-type switching supplies (LLC converters).

MOSFET Transistors, STMicroelectronics

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more