N-Channel MOSFET, 20 A, 600 V, 3-Pin TO-220FP STMicroelectronics STP20NM60FP

Κωδικός Προϊόντος της RS: 486-2234Κατασκευαστής: STMicroelectronicsΚωδικός Κατασκευαστή: STP20NM60FP
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Τεχνικό φυλλάδιο

Προδιαγραφές

Channel Type

N

Maximum Continuous Drain Current

20 A

Maximum Drain Source Voltage

600 V

Series

MDmesh

Package Type

TO-220FP

Mounting Type

Through Hole

Pin Count

3

Maximum Drain Source Resistance

290 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

5V

Minimum Gate Threshold Voltage

3V

Maximum Power Dissipation

45 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-30 V, +30 V

Typical Gate Charge @ Vgs

39 nC @ 10 V

Number of Elements per Chip

1

Maximum Operating Temperature

+150 °C

Length

10.4mm

Width

4.6mm

Transistor Material

Si

Minimum Operating Temperature

-65 °C

Height

9.3mm

Λεπτομέρειες Προϊόντος

N-Channel MDmesh™, 600V/650V, STMicroelectronics

MOSFET Transistors, STMicroelectronics

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Ημερομηνία αποθέματος προσωρινά μη διαθέσιμη

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Ημερομηνία αποθέματος προσωρινά μη διαθέσιμη

€ 9,23

Μονάδας (Exc. Vat)Χωρίς Φ.Π.Α

€ 11,45

Μονάδας (Including VAT) Με Φ.Π.Α

N-Channel MOSFET, 20 A, 600 V, 3-Pin TO-220FP STMicroelectronics STP20NM60FP
Επιλέγξτε συσκευασία

€ 9,23

Μονάδας (Exc. Vat)Χωρίς Φ.Π.Α

€ 11,45

Μονάδας (Including VAT) Με Φ.Π.Α

N-Channel MOSFET, 20 A, 600 V, 3-Pin TO-220FP STMicroelectronics STP20NM60FP
Ημερομηνία αποθέματος προσωρινά μη διαθέσιμη
Επιλέγξτε συσκευασία

Αγοράστε μαζικά

Quantity ΠοσότηταΤιμή μονάδας
1 - 9€ 9,23
10 - 99€ 7,97
100 - 499€ 6,48
500 - 999€ 5,85
1000+€ 5,02

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  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more

Τεχνικό φυλλάδιο

Προδιαγραφές

Channel Type

N

Maximum Continuous Drain Current

20 A

Maximum Drain Source Voltage

600 V

Series

MDmesh

Package Type

TO-220FP

Mounting Type

Through Hole

Pin Count

3

Maximum Drain Source Resistance

290 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

5V

Minimum Gate Threshold Voltage

3V

Maximum Power Dissipation

45 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-30 V, +30 V

Typical Gate Charge @ Vgs

39 nC @ 10 V

Number of Elements per Chip

1

Maximum Operating Temperature

+150 °C

Length

10.4mm

Width

4.6mm

Transistor Material

Si

Minimum Operating Temperature

-65 °C

Height

9.3mm

Λεπτομέρειες Προϊόντος

N-Channel MDmesh™, 600V/650V, STMicroelectronics

MOSFET Transistors, STMicroelectronics

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more