STMicroelectronics DeepGate, STripFET N-Channel MOSFET, 120 A, 60 V, 3-Pin TO-220 STP260N6F6
Τεχνικό φυλλάδιο
Προδιαγραφές
Brand
STMicroelectronicsChannel Type
N
Maximum Continuous Drain Current
120 A
Maximum Drain Source Voltage
60 V
Package Type
TO-220
Series
DeepGate, STripFET
Mounting Type
Through Hole
Pin Count
3
Maximum Drain Source Resistance
3.7 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
4V
Minimum Gate Threshold Voltage
2V
Maximum Power Dissipation
300 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Number of Elements per Chip
1
Length
10.4mm
Maximum Operating Temperature
+175 °C
Typical Gate Charge @ Vgs
183 nC @ 10 V
Width
4.6mm
Transistor Material
Si
Height
15.75mm
Minimum Operating Temperature
-55 °C
Λεπτομέρειες Προϊόντος
N-Channel STripFET™ DeepGate™, STMicroelectronics
STripFET™ MOSFETs with a wide breakdown voltage range offer ultra-low gate charge and low on-resistance.
MOSFET Transistors, STMicroelectronics
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€ 12,14
€ 12,14 Μονάδας (Exc. Vat)Χωρίς Φ.Π.Α
€ 15,05
€ 15,05 Μονάδας Με Φ.Π.Α
Standard
1
€ 12,14
€ 12,14 Μονάδας (Exc. Vat)Χωρίς Φ.Π.Α
€ 15,05
€ 15,05 Μονάδας Με Φ.Π.Α
Ημερομηνία αποθέματος προσωρινά μη διαθέσιμη
Standard
1
Ημερομηνία αποθέματος προσωρινά μη διαθέσιμη
| Quantity Ποσότητα | Τιμή μονάδας |
|---|---|
| 1 - 1 | € 12,14 |
| 2+ | € 11,69 |
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
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Τεχνικό φυλλάδιο
Προδιαγραφές
Brand
STMicroelectronicsChannel Type
N
Maximum Continuous Drain Current
120 A
Maximum Drain Source Voltage
60 V
Package Type
TO-220
Series
DeepGate, STripFET
Mounting Type
Through Hole
Pin Count
3
Maximum Drain Source Resistance
3.7 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
4V
Minimum Gate Threshold Voltage
2V
Maximum Power Dissipation
300 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Number of Elements per Chip
1
Length
10.4mm
Maximum Operating Temperature
+175 °C
Typical Gate Charge @ Vgs
183 nC @ 10 V
Width
4.6mm
Transistor Material
Si
Height
15.75mm
Minimum Operating Temperature
-55 °C
Λεπτομέρειες Προϊόντος
N-Channel STripFET™ DeepGate™, STMicroelectronics
STripFET™ MOSFETs with a wide breakdown voltage range offer ultra-low gate charge and low on-resistance.
MOSFET Transistors, STMicroelectronics
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
- View and contribute website content and forums
- Download 3D Models, Schematics and Footprints from more than a million products