STMicroelectronics Type N-Channel MOSFET, 120 A, 60 V Enhancement, 3-Pin TO-220 STP260N6F6

Κωδικός Προϊόντος της RS: 760-9673Κατασκευαστής: STMicroelectronicsΚωδικός Κατασκευαστή: STP260N6F6
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Τεχνικό φυλλάδιο

Προδιαγραφές

Channel Type

Type N

Product Type

MOSFET

Maximum Continuous Drain Current Id

120A

Maximum Drain Source Voltage Vds

60V

Package Type

TO-220

Mount Type

Through Hole

Pin Count

3

Maximum Drain Source Resistance Rds

3mΩ

Channel Mode

Enhancement

Maximum Power Dissipation Pd

300W

Maximum Gate Source Voltage Vgs

20 V

Forward Voltage Vf

1.1V

Minimum Operating Temperature

-55°C

Typical Gate Charge Qg @ Vgs

183nC

Maximum Operating Temperature

175°C

Width

4.6 mm

Standards/Approvals

No

Height

15.75mm

Length

10.4mm

Automotive Standard

No

Λεπτομέρειες Προϊόντος

N-Channel STripFET™ DeepGate™, STMicroelectronics

STripFET™ MOSFETs with a wide breakdown voltage range offer ultra-low gate charge and low on-resistance.

MOSFET Transistors, STMicroelectronics

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Ημερομηνία αποθέματος προσωρινά μη διαθέσιμη

€ 5,69

€ 5,69 Μονάδας (Exc. Vat)Χωρίς Φ.Π.Α

€ 7,06

€ 7,06 Μονάδας Με Φ.Π.Α

STMicroelectronics Type N-Channel MOSFET, 120 A, 60 V Enhancement, 3-Pin TO-220 STP260N6F6
Επιλέγξτε συσκευασία

€ 5,69

€ 5,69 Μονάδας (Exc. Vat)Χωρίς Φ.Π.Α

€ 7,06

€ 7,06 Μονάδας Με Φ.Π.Α

STMicroelectronics Type N-Channel MOSFET, 120 A, 60 V Enhancement, 3-Pin TO-220 STP260N6F6

Ημερομηνία αποθέματος προσωρινά μη διαθέσιμη

Επιλέγξτε συσκευασία

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more

Τεχνικό φυλλάδιο

Προδιαγραφές

Channel Type

Type N

Product Type

MOSFET

Maximum Continuous Drain Current Id

120A

Maximum Drain Source Voltage Vds

60V

Package Type

TO-220

Mount Type

Through Hole

Pin Count

3

Maximum Drain Source Resistance Rds

3mΩ

Channel Mode

Enhancement

Maximum Power Dissipation Pd

300W

Maximum Gate Source Voltage Vgs

20 V

Forward Voltage Vf

1.1V

Minimum Operating Temperature

-55°C

Typical Gate Charge Qg @ Vgs

183nC

Maximum Operating Temperature

175°C

Width

4.6 mm

Standards/Approvals

No

Height

15.75mm

Length

10.4mm

Automotive Standard

No

Λεπτομέρειες Προϊόντος

N-Channel STripFET™ DeepGate™, STMicroelectronics

STripFET™ MOSFETs with a wide breakdown voltage range offer ultra-low gate charge and low on-resistance.

MOSFET Transistors, STMicroelectronics

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more