N-Channel MOSFET Transistor, 15 A, 3-Pin TO-220 STMicroelectronics STP26N60DM6

Κωδικός Προϊόντος της RS: 192-4925Κατασκευαστής: STMicroelectronicsΚωδικός Κατασκευαστή: STP26N60DM6
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Τεχνικό φυλλάδιο

Προδιαγραφές

Channel Type

N

Maximum Continuous Drain Current

15 A

Package Type

TO-220

Mounting Type

Through Hole

Pin Count

3

Maximum Drain Source Resistance

195 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

4.75V

Minimum Gate Threshold Voltage

3.25V

Maximum Power Dissipation

110 W

Transistor Configuration

Single

Maximum Gate Source Voltage

±25 V

Maximum Operating Temperature

+150 °C

Length

10.4mm

Typical Gate Charge @ Vgs

24 nC @ 10 V

Width

4.6mm

Number of Elements per Chip

1

Forward Diode Voltage

1.6V

Height

15.75mm

Minimum Operating Temperature

-55 °C

Χώρα Προέλευσης

China

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Ημερομηνία αποθέματος προσωρινά μη διαθέσιμη

Παρακαλούμε ελέγξτε ξανά αργότερα.

Ημερομηνία αποθέματος προσωρινά μη διαθέσιμη

€ 5,32

Μονάδας (Σε ένα πακέτο των 2) (Exc. Vat)Χωρίς Φ.Π.Α

€ 6,597

Μονάδας (Σε ένα πακέτο των 2) (Including VAT) Με Φ.Π.Α

N-Channel MOSFET Transistor, 15 A, 3-Pin TO-220 STMicroelectronics STP26N60DM6
Επιλέγξτε συσκευασία

€ 5,32

Μονάδας (Σε ένα πακέτο των 2) (Exc. Vat)Χωρίς Φ.Π.Α

€ 6,597

Μονάδας (Σε ένα πακέτο των 2) (Including VAT) Με Φ.Π.Α

N-Channel MOSFET Transistor, 15 A, 3-Pin TO-220 STMicroelectronics STP26N60DM6
Ημερομηνία αποθέματος προσωρινά μη διαθέσιμη
Επιλέγξτε συσκευασία

Αγοράστε μαζικά

Quantity ΠοσότηταΤιμή μονάδαςPer Πακέτο
2 - 8€ 5,32€ 10,64
10 - 18€ 5,07€ 10,14
20 - 48€ 4,86€ 9,72
50 - 98€ 4,66€ 9,32
100+€ 4,51€ 9,02

Ideate. Create. Collaborate

JOIN FOR FREE

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design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more

Τεχνικό φυλλάδιο

Προδιαγραφές

Channel Type

N

Maximum Continuous Drain Current

15 A

Package Type

TO-220

Mounting Type

Through Hole

Pin Count

3

Maximum Drain Source Resistance

195 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

4.75V

Minimum Gate Threshold Voltage

3.25V

Maximum Power Dissipation

110 W

Transistor Configuration

Single

Maximum Gate Source Voltage

±25 V

Maximum Operating Temperature

+150 °C

Length

10.4mm

Typical Gate Charge @ Vgs

24 nC @ 10 V

Width

4.6mm

Number of Elements per Chip

1

Forward Diode Voltage

1.6V

Height

15.75mm

Minimum Operating Temperature

-55 °C

Χώρα Προέλευσης

China

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more