N-Channel MOSFET Transistor, 25 A, 3-Pin TO-220 STMicroelectronics STP26N65DM2

Κωδικός Προϊόντος της RS: 192-4662Κατασκευαστής: STMicroelectronicsΚωδικός Κατασκευαστή: STP26N65DM2
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Τεχνικό φυλλάδιο

Προδιαγραφές

Channel Type

N

Maximum Continuous Drain Current

25 A

Package Type

TO-220

Mounting Type

Through Hole

Pin Count

3

Maximum Drain Source Resistance

190 μΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

5V

Minimum Gate Threshold Voltage

3V

Maximum Power Dissipation

160 W

Transistor Configuration

Single

Maximum Gate Source Voltage

±25 V

Typical Gate Charge @ Vgs

35.5 nC @ 10 V

Number of Elements per Chip

1

Maximum Operating Temperature

+150 °C

Length

10.4mm

Width

4.6mm

Minimum Operating Temperature

-55 °C

Forward Diode Voltage

1.6V

Height

15.75mm

Χώρα Προέλευσης

China

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Ημερομηνία αποθέματος προσωρινά μη διαθέσιμη

Παρακαλούμε ελέγξτε ξανά αργότερα.

Ημερομηνία αποθέματος προσωρινά μη διαθέσιμη

€ 4,11

Μονάδας (Σε μία ράγα των 50) (Exc. Vat)Χωρίς Φ.Π.Α

€ 5,096

Μονάδας (Σε μία ράγα των 50) (Including VAT) Με Φ.Π.Α

N-Channel MOSFET Transistor, 25 A, 3-Pin TO-220 STMicroelectronics STP26N65DM2

€ 4,11

Μονάδας (Σε μία ράγα των 50) (Exc. Vat)Χωρίς Φ.Π.Α

€ 5,096

Μονάδας (Σε μία ράγα των 50) (Including VAT) Με Φ.Π.Α

N-Channel MOSFET Transistor, 25 A, 3-Pin TO-220 STMicroelectronics STP26N65DM2
Ημερομηνία αποθέματος προσωρινά μη διαθέσιμη

Αγοράστε μαζικά

Quantity ΠοσότηταΤιμή μονάδαςPer Ράγα
50 - 50€ 4,11€ 205,50
100 - 200€ 3,63€ 181,50
250 - 450€ 3,50€ 175,00
500 - 950€ 3,18€ 159,00
1000+€ 3,00€ 150,00

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
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  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more

Τεχνικό φυλλάδιο

Προδιαγραφές

Channel Type

N

Maximum Continuous Drain Current

25 A

Package Type

TO-220

Mounting Type

Through Hole

Pin Count

3

Maximum Drain Source Resistance

190 μΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

5V

Minimum Gate Threshold Voltage

3V

Maximum Power Dissipation

160 W

Transistor Configuration

Single

Maximum Gate Source Voltage

±25 V

Typical Gate Charge @ Vgs

35.5 nC @ 10 V

Number of Elements per Chip

1

Maximum Operating Temperature

+150 °C

Length

10.4mm

Width

4.6mm

Minimum Operating Temperature

-55 °C

Forward Diode Voltage

1.6V

Height

15.75mm

Χώρα Προέλευσης

China

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more