STMicroelectronics STripFET N-Channel MOSFET, 35 A, 100 V, 3-Pin TO-220 STP30NF10

Κωδικός Προϊόντος της RS: 168-6102Κατασκευαστής: STMicroelectronicsΚωδικός Κατασκευαστή: STP30NF10
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Προβολή όλων σε MOSFETs

Τεχνικό φυλλάδιο

Προδιαγραφές

Channel Type

N

Maximum Continuous Drain Current

35 A

Maximum Drain Source Voltage

100 V

Package Type

TO-220

Series

STripFET

Mounting Type

Through Hole

Pin Count

3

Maximum Drain Source Resistance

45 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

4V

Minimum Gate Threshold Voltage

2V

Maximum Power Dissipation

115 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-20 V, +20 V

Length

10.4mm

Typical Gate Charge @ Vgs

40 nC @ 10 V

Transistor Material

Si

Maximum Operating Temperature

+175 °C

Number of Elements per Chip

1

Width

4.6mm

Height

9.15mm

Minimum Operating Temperature

-55 °C

Λεπτομέρειες Προϊόντος

N-Channel STripFET™, STMicroelectronics

MOSFET Transistors, STMicroelectronics

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€ 73,00

€ 1,46 Μονάδας (Σε μία ράγα των 50) (Exc. Vat)Χωρίς Φ.Π.Α

€ 90,52

€ 1,81 Μονάδας (Σε μία ράγα των 50) Με Φ.Π.Α

STMicroelectronics STripFET N-Channel MOSFET, 35 A, 100 V, 3-Pin TO-220 STP30NF10

€ 73,00

€ 1,46 Μονάδας (Σε μία ράγα των 50) (Exc. Vat)Χωρίς Φ.Π.Α

€ 90,52

€ 1,81 Μονάδας (Σε μία ράγα των 50) Με Φ.Π.Α

STMicroelectronics STripFET N-Channel MOSFET, 35 A, 100 V, 3-Pin TO-220 STP30NF10

Ημερομηνία αποθέματος προσωρινά μη διαθέσιμη

Ημερομηνία αποθέματος προσωρινά μη διαθέσιμη

Quantity ΠοσότηταΤιμή μονάδαςPer Ράγα
50 - 50€ 1,46€ 73,00
100+€ 1,41€ 70,50

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  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
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Click here to find out more

Τεχνικό φυλλάδιο

Προδιαγραφές

Channel Type

N

Maximum Continuous Drain Current

35 A

Maximum Drain Source Voltage

100 V

Package Type

TO-220

Series

STripFET

Mounting Type

Through Hole

Pin Count

3

Maximum Drain Source Resistance

45 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

4V

Minimum Gate Threshold Voltage

2V

Maximum Power Dissipation

115 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-20 V, +20 V

Length

10.4mm

Typical Gate Charge @ Vgs

40 nC @ 10 V

Transistor Material

Si

Maximum Operating Temperature

+175 °C

Number of Elements per Chip

1

Width

4.6mm

Height

9.15mm

Minimum Operating Temperature

-55 °C

Λεπτομέρειες Προϊόντος

N-Channel STripFET™, STMicroelectronics

MOSFET Transistors, STMicroelectronics

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more