STMicroelectronics STripFET H7 Type N-Channel Power MOSFET, 180 A, 100 V Enhancement, 3-Pin TO-220

Κωδικός Προϊόντος της RS: 103-2008Κατασκευαστής: STMicroelectronicsΚωδικός Κατασκευαστή: STP310N10F7
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Τεχνικό φυλλάδιο

Προδιαγραφές

Channel Type

Type N

Product Type

Power MOSFET

Maximum Continuous Drain Current Id

180A

Maximum Drain Source Voltage Vds

100V

Package Type

TO-220

Series

STripFET H7

Mount Type

Through Hole

Pin Count

3

Maximum Drain Source Resistance Rds

2.7mΩ

Channel Mode

Enhancement

Forward Voltage Vf

1.5V

Maximum Gate Source Voltage Vgs

±20 V

Minimum Operating Temperature

-55°C

Typical Gate Charge Qg @ Vgs

180nC

Maximum Power Dissipation Pd

315W

Maximum Operating Temperature

175°C

Standards/Approvals

No

Width

4.6 mm

Height

15.75mm

Length

10.4mm

Automotive Standard

No

Λεπτομέρειες Προϊόντος

N-Channel STripFET™ H7 Series, STMicroelectronics

STripFET™ MOSFETs with a wide breakdown voltage range offer ultra-low gate charge and low on-resistance.

MOSFET Transistors, STMicroelectronics

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Ημερομηνία αποθέματος προσωρινά μη διαθέσιμη

€ 312,00

€ 6,24 Μονάδας (Σε μία ράγα των 50) (Exc. Vat)Χωρίς Φ.Π.Α

€ 386,88

€ 7,738 Μονάδας (Σε μία ράγα των 50) Με Φ.Π.Α

STMicroelectronics STripFET H7 Type N-Channel Power MOSFET, 180 A, 100 V Enhancement, 3-Pin TO-220

€ 312,00

€ 6,24 Μονάδας (Σε μία ράγα των 50) (Exc. Vat)Χωρίς Φ.Π.Α

€ 386,88

€ 7,738 Μονάδας (Σε μία ράγα των 50) Με Φ.Π.Α

STMicroelectronics STripFET H7 Type N-Channel Power MOSFET, 180 A, 100 V Enhancement, 3-Pin TO-220

Ημερομηνία αποθέματος προσωρινά μη διαθέσιμη

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more

Τεχνικό φυλλάδιο

Προδιαγραφές

Channel Type

Type N

Product Type

Power MOSFET

Maximum Continuous Drain Current Id

180A

Maximum Drain Source Voltage Vds

100V

Package Type

TO-220

Series

STripFET H7

Mount Type

Through Hole

Pin Count

3

Maximum Drain Source Resistance Rds

2.7mΩ

Channel Mode

Enhancement

Forward Voltage Vf

1.5V

Maximum Gate Source Voltage Vgs

±20 V

Minimum Operating Temperature

-55°C

Typical Gate Charge Qg @ Vgs

180nC

Maximum Power Dissipation Pd

315W

Maximum Operating Temperature

175°C

Standards/Approvals

No

Width

4.6 mm

Height

15.75mm

Length

10.4mm

Automotive Standard

No

Λεπτομέρειες Προϊόντος

N-Channel STripFET™ H7 Series, STMicroelectronics

STripFET™ MOSFETs with a wide breakdown voltage range offer ultra-low gate charge and low on-resistance.

MOSFET Transistors, STMicroelectronics

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more