STMicroelectronics STripFET II N-Channel MOSFET, 60 A, 60 V, 3-Pin TO-220 STP60NF06L
Τεχνικό φυλλάδιο
Προδιαγραφές
Brand
STMicroelectronicsChannel Type
N
Maximum Continuous Drain Current
60 A
Maximum Drain Source Voltage
60 V
Series
STripFET II
Package Type
TO-220
Mounting Type
Through Hole
Pin Count
3
Maximum Drain Source Resistance
14 mΩ
Channel Mode
Enhancement
Minimum Gate Threshold Voltage
1V
Maximum Power Dissipation
110 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-15 V, +15 V
Number of Elements per Chip
1
Length
10.4mm
Typical Gate Charge @ Vgs
35 nC @ 4.5 V
Maximum Operating Temperature
+175 °C
Width
4.6mm
Transistor Material
Si
Height
9.15mm
Minimum Operating Temperature
-65 °C
Λεπτομέρειες Προϊόντος
N-Channel STripFET™ II, STMicroelectronics
STripFET™ MOSFETs with a wide breakdown voltage range offer ultra-low gate charge and low on-resistance.
MOSFET Transistors, STMicroelectronics
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€ 83,50
€ 1,67 Μονάδας (Σε μία ράγα των 50) (Exc. Vat)Χωρίς Φ.Π.Α
€ 103,54
€ 2,071 Μονάδας (Σε μία ράγα των 50) Με Φ.Π.Α
50
€ 83,50
€ 1,67 Μονάδας (Σε μία ράγα των 50) (Exc. Vat)Χωρίς Φ.Π.Α
€ 103,54
€ 2,071 Μονάδας (Σε μία ράγα των 50) Με Φ.Π.Α
Ημερομηνία αποθέματος προσωρινά μη διαθέσιμη
50
Ημερομηνία αποθέματος προσωρινά μη διαθέσιμη
| Quantity Ποσότητα | Τιμή μονάδας | Per Ράγα |
|---|---|---|
| 50 - 50 | € 1,67 | € 83,50 |
| 100 - 450 | € 1,38 | € 69,00 |
| 500 - 950 | € 1,17 | € 58,50 |
| 1000 - 4950 | € 1,07 | € 53,50 |
| 5000+ | € 0,89 | € 44,50 |
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
- View and contribute website content and forums
- Download 3D Models, Schematics and Footprints from more than a million products
Τεχνικό φυλλάδιο
Προδιαγραφές
Brand
STMicroelectronicsChannel Type
N
Maximum Continuous Drain Current
60 A
Maximum Drain Source Voltage
60 V
Series
STripFET II
Package Type
TO-220
Mounting Type
Through Hole
Pin Count
3
Maximum Drain Source Resistance
14 mΩ
Channel Mode
Enhancement
Minimum Gate Threshold Voltage
1V
Maximum Power Dissipation
110 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-15 V, +15 V
Number of Elements per Chip
1
Length
10.4mm
Typical Gate Charge @ Vgs
35 nC @ 4.5 V
Maximum Operating Temperature
+175 °C
Width
4.6mm
Transistor Material
Si
Height
9.15mm
Minimum Operating Temperature
-65 °C
Λεπτομέρειες Προϊόντος
N-Channel STripFET™ II, STMicroelectronics
STripFET™ MOSFETs with a wide breakdown voltage range offer ultra-low gate charge and low on-resistance.
MOSFET Transistors, STMicroelectronics
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
- View and contribute website content and forums
- Download 3D Models, Schematics and Footprints from more than a million products