Τεχνικό φυλλάδιο
Προδιαγραφές
Brand
STMicroelectronicsProduct Type
MOSFET
Channel Type
Type N
Maximum Continuous Drain Current Id
10A
Maximum Drain Source Voltage Vds
800V
Package Type
TO-220
Series
MDmesh K6
Mount Type
Through Hole
Pin Count
3
Maximum Drain Source Resistance Rds
0.6Ω
Minimum Operating Temperature
-55°C
Typical Gate Charge Qg @ Vgs
25.9nC
Maximum Operating Temperature
150°C
Standards/Approvals
No
Automotive Standard
No
Χώρα Προέλευσης
China
Λεπτομέρειες Προϊόντος
The STMicroelectronics very high voltage N-channel Power MOSFET is designed using the ultimate MDmesh K6 technology based on super junction technology. The result is the best-in-class on-resistance per area and gate charge for applications requiring superior power density and high efficiency.
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Ημερομηνία αποθέματος προσωρινά μη διαθέσιμη
P.O.A.
Συσκευασία Παραγωγής (Ράγα)
1
P.O.A.
Ημερομηνία αποθέματος προσωρινά μη διαθέσιμη
Συσκευασία Παραγωγής (Ράγα)
1
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
Τεχνικό φυλλάδιο
Προδιαγραφές
Brand
STMicroelectronicsProduct Type
MOSFET
Channel Type
Type N
Maximum Continuous Drain Current Id
10A
Maximum Drain Source Voltage Vds
800V
Package Type
TO-220
Series
MDmesh K6
Mount Type
Through Hole
Pin Count
3
Maximum Drain Source Resistance Rds
0.6Ω
Minimum Operating Temperature
-55°C
Typical Gate Charge Qg @ Vgs
25.9nC
Maximum Operating Temperature
150°C
Standards/Approvals
No
Automotive Standard
No
Χώρα Προέλευσης
China
Λεπτομέρειες Προϊόντος
The STMicroelectronics very high voltage N-channel Power MOSFET is designed using the ultimate MDmesh K6 technology based on super junction technology. The result is the best-in-class on-resistance per area and gate charge for applications requiring superior power density and high efficiency.
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
