STMicroelectronics MDmesh, SuperMESH N-Channel MOSFET, 8 A, 900 V, 3-Pin TO-220 STP9NK90Z

Κωδικός Προϊόντος της RS: 761-0213Κατασκευαστής: STMicroelectronicsΚωδικός Κατασκευαστή: STP9NK90Z
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Προβολή όλων σε MOSFETs

Τεχνικό φυλλάδιο

Προδιαγραφές

Channel Type

N

Maximum Continuous Drain Current

8 A

Maximum Drain Source Voltage

900 V

Package Type

TO-220

Series

MDmesh, SuperMESH

Mounting Type

Through Hole

Pin Count

3

Maximum Drain Source Resistance

1.3 Ω

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

4.5V

Minimum Gate Threshold Voltage

3V

Maximum Power Dissipation

160 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-30 V, +30 V

Maximum Operating Temperature

+150 °C

Typical Gate Charge @ Vgs

72 nC @ 10 V

Width

4.6mm

Transistor Material

Si

Number of Elements per Chip

1

Length

10.4mm

Height

15.75mm

Minimum Operating Temperature

-55 °C

Λεπτομέρειες Προϊόντος

N-Channel MDmesh™ SuperMESH™, 700V to 1200V, STMicroelectronics

MOSFET Transistors, STMicroelectronics

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€ 2,85

€ 2,85 Μονάδας (Exc. Vat)Χωρίς Φ.Π.Α

€ 3,53

€ 3,53 Μονάδας Με Φ.Π.Α

STMicroelectronics MDmesh, SuperMESH N-Channel MOSFET, 8 A, 900 V, 3-Pin TO-220 STP9NK90Z

€ 2,85

€ 2,85 Μονάδας (Exc. Vat)Χωρίς Φ.Π.Α

€ 3,53

€ 3,53 Μονάδας Με Φ.Π.Α

STMicroelectronics MDmesh, SuperMESH N-Channel MOSFET, 8 A, 900 V, 3-Pin TO-220 STP9NK90Z

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Ημερομηνία αποθέματος προσωρινά μη διαθέσιμη

Quantity ΠοσότηταΤιμή μονάδας
1 - 1€ 2,85
2+€ 2,74

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  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
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Τεχνικό φυλλάδιο

Προδιαγραφές

Channel Type

N

Maximum Continuous Drain Current

8 A

Maximum Drain Source Voltage

900 V

Package Type

TO-220

Series

MDmesh, SuperMESH

Mounting Type

Through Hole

Pin Count

3

Maximum Drain Source Resistance

1.3 Ω

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

4.5V

Minimum Gate Threshold Voltage

3V

Maximum Power Dissipation

160 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-30 V, +30 V

Maximum Operating Temperature

+150 °C

Typical Gate Charge @ Vgs

72 nC @ 10 V

Width

4.6mm

Transistor Material

Si

Number of Elements per Chip

1

Length

10.4mm

Height

15.75mm

Minimum Operating Temperature

-55 °C

Λεπτομέρειες Προϊόντος

N-Channel MDmesh™ SuperMESH™, 700V to 1200V, STMicroelectronics

MOSFET Transistors, STMicroelectronics

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more