Τεχνικό φυλλάδιο
Προδιαγραφές
Brand
STMicroelectronicsMount Type
Through Hole
Product Type
Rectifier & Schottky Diode
Package Type
DO-247 LL
Maximum Continuous Forward Current If
20A
Peak Reverse Repetitive Voltage Vrrm
1200V
Series
STPS
Diode Configuration
Single
Rectifier Type
Rectifier Diode
Pin Count
2
Minimum Operating Temperature
-65°C
Peak Non-Repetitive Forward Surge Current Ifsm
1100A
Maximum Operating Temperature
175°C
Standards/Approvals
RoHS
Length
15.9mm
Height
41.2mm
Automotive Standard
AEC-Q101
Χώρα Προέλευσης
China
Λεπτομέρειες Προϊόντος
The STMicroelectronics SiC diode is available in DO-247 with long leads and is an ultrahigh performance power schottky rectifier. It is manufactured using a silicon carbide substrate. The wide band gap material allows the design of a low VF schottky diode structure with a 1200 V rating. Due to the schottky construction, no recovery is shown during turn off and ringing patterns are negligible. The minimal capacitive turn-off behaviour is independent of temperature.
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Ημερομηνία αποθέματος προσωρινά μη διαθέσιμη
€ 385,20
€ 12,84 Μονάδας (Σε μία ράγα των 30) (Exc. Vat)Χωρίς Φ.Π.Α
€ 477,65
€ 15,922 Μονάδας (Σε μία ράγα των 30) Με Φ.Π.Α
30
€ 385,20
€ 12,84 Μονάδας (Σε μία ράγα των 30) (Exc. Vat)Χωρίς Φ.Π.Α
€ 477,65
€ 15,922 Μονάδας (Σε μία ράγα των 30) Με Φ.Π.Α
Ημερομηνία αποθέματος προσωρινά μη διαθέσιμη
30
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
Τεχνικό φυλλάδιο
Προδιαγραφές
Brand
STMicroelectronicsMount Type
Through Hole
Product Type
Rectifier & Schottky Diode
Package Type
DO-247 LL
Maximum Continuous Forward Current If
20A
Peak Reverse Repetitive Voltage Vrrm
1200V
Series
STPS
Diode Configuration
Single
Rectifier Type
Rectifier Diode
Pin Count
2
Minimum Operating Temperature
-65°C
Peak Non-Repetitive Forward Surge Current Ifsm
1100A
Maximum Operating Temperature
175°C
Standards/Approvals
RoHS
Length
15.9mm
Height
41.2mm
Automotive Standard
AEC-Q101
Χώρα Προέλευσης
China
Λεπτομέρειες Προϊόντος
The STMicroelectronics SiC diode is available in DO-247 with long leads and is an ultrahigh performance power schottky rectifier. It is manufactured using a silicon carbide substrate. The wide band gap material allows the design of a low VF schottky diode structure with a 1200 V rating. Due to the schottky construction, no recovery is shown during turn off and ringing patterns are negligible. The minimal capacitive turn-off behaviour is independent of temperature.
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
