Τεχνικό φυλλάδιο
Προδιαγραφές
Brand
STMicroelectronicsProduct Type
Diode
Mount Type
Surface
Package Type
TO-263
Maximum Continuous Forward Current If
20A
Peak Reverse Repetitive Voltage Vrrm
1200V
Diode Configuration
Single
Pin Count
2
Peak Reverse Current Ir
60μA
Maximum Forward Voltage Vf
2.25V
Minimum Operating Temperature
-40°C
Peak Non-Repetitive Forward Surge Current Ifsm
120A
Maximum Operating Temperature
175°C
Length
15.95mm
Height
4.3mm
Standards/Approvals
RoHS
Automotive Standard
No
Λεπτομέρειες Προϊόντος
The STMicroelectronics 1200V power schottky silicon carbide diode is an ultrahigh performance power schottky rectifier. It is manufactured using a silicon carbide substrate. This rectifier will enhance the performance of the targeted application. Its Its high forward surge capability.
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Ημερομηνία αποθέματος προσωρινά μη διαθέσιμη
P.O.A.
Μονάδας (Σε ένα καρούλι των 1000) (Exc. Vat)Χωρίς Φ.Π.Α
1000
P.O.A.
Μονάδας (Σε ένα καρούλι των 1000) (Exc. Vat)Χωρίς Φ.Π.Α
Ημερομηνία αποθέματος προσωρινά μη διαθέσιμη
1000
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
Τεχνικό φυλλάδιο
Προδιαγραφές
Brand
STMicroelectronicsProduct Type
Diode
Mount Type
Surface
Package Type
TO-263
Maximum Continuous Forward Current If
20A
Peak Reverse Repetitive Voltage Vrrm
1200V
Diode Configuration
Single
Pin Count
2
Peak Reverse Current Ir
60μA
Maximum Forward Voltage Vf
2.25V
Minimum Operating Temperature
-40°C
Peak Non-Repetitive Forward Surge Current Ifsm
120A
Maximum Operating Temperature
175°C
Length
15.95mm
Height
4.3mm
Standards/Approvals
RoHS
Automotive Standard
No
Λεπτομέρειες Προϊόντος
The STMicroelectronics 1200V power schottky silicon carbide diode is an ultrahigh performance power schottky rectifier. It is manufactured using a silicon carbide substrate. This rectifier will enhance the performance of the targeted application. Its Its high forward surge capability.
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
