N-Channel MOSFET, 6 A, 20 V, 8-Pin SOIC STMicroelectronics STS6NF20V

Κωδικός Προϊόντος της RS: 178-5118Κατασκευαστής: STMicroelectronicsΚωδικός Κατασκευαστή: STS6NF20V
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Τεχνικό φυλλάδιο

Προδιαγραφές

Channel Type

N

Maximum Continuous Drain Current

6 A

Maximum Drain Source Voltage

20 V

Package Type

SOIC

Mounting Type

Surface Mount

Pin Count

8

Maximum Drain Source Resistance

0.045 Ω

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

0.6V

Minimum Gate Threshold Voltage

0.6V

Maximum Power Dissipation

2.5 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-12 V, +12 V

Maximum Operating Temperature

+150 °C

Transistor Material

Si

Length

5mm

Typical Gate Charge @ Vgs

8.5 nC @ 4.5 V

Width

4mm

Number of Elements per Chip

1

Height

1.25mm

Series

STripFET

Minimum Operating Temperature

-55 °C

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Ημερομηνία αποθέματος προσωρινά μη διαθέσιμη

Παρακαλούμε ελέγξτε ξανά αργότερα.

Ημερομηνία αποθέματος προσωρινά μη διαθέσιμη

€ 0,60

Μονάδας (Σε ένα καρούλι των 2500) (Exc. Vat)Χωρίς Φ.Π.Α

€ 0,744

Μονάδας (Σε ένα καρούλι των 2500) (Including VAT) Με Φ.Π.Α

N-Channel MOSFET, 6 A, 20 V, 8-Pin SOIC STMicroelectronics STS6NF20V

€ 0,60

Μονάδας (Σε ένα καρούλι των 2500) (Exc. Vat)Χωρίς Φ.Π.Α

€ 0,744

Μονάδας (Σε ένα καρούλι των 2500) (Including VAT) Με Φ.Π.Α

N-Channel MOSFET, 6 A, 20 V, 8-Pin SOIC STMicroelectronics STS6NF20V
Ημερομηνία αποθέματος προσωρινά μη διαθέσιμη

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more

Τεχνικό φυλλάδιο

Προδιαγραφές

Channel Type

N

Maximum Continuous Drain Current

6 A

Maximum Drain Source Voltage

20 V

Package Type

SOIC

Mounting Type

Surface Mount

Pin Count

8

Maximum Drain Source Resistance

0.045 Ω

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

0.6V

Minimum Gate Threshold Voltage

0.6V

Maximum Power Dissipation

2.5 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-12 V, +12 V

Maximum Operating Temperature

+150 °C

Transistor Material

Si

Length

5mm

Typical Gate Charge @ Vgs

8.5 nC @ 4.5 V

Width

4mm

Number of Elements per Chip

1

Height

1.25mm

Series

STripFET

Minimum Operating Temperature

-55 °C

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more